SNOSAW8F May   2008  – July 2026 LM7321 , LM7322

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Short Circuit Current and Dissipation Issues
    4. 6.4 Device Functional Modes
      1. 6.4.1 Driving Capacitive Loads
      2. 6.4.2 Electrical Overstress
      3. 6.4.3 Old Versus New Die Comparison
  8. 7 Application and Implementation
    1. 7.1 Typical Application
    2. 7.2 Layout
      1. 7.2.1 Layout Guidelines
      2. 7.2.2 Layout Example
  9. 8 Power Supply Recommendations
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Revision History

Changes from Revision E (September 2015) to Revision F (March 2022)

  • Updated Features section per New Die specificationsGo
  • Updated Description section per New Die specificationsGo
  • Updated Absolute Maximum Ratings section as per New Die specificationsGo
  • Updated Supply Voltage minimum from 2.5V to 2.7VGo
  • Updated Junction-to-ambient thermal resistance from 165°C/W, 325°C/W, and 235°C/W to 133.5°C/W, 185.4°C/W, and 169.6°C/W respectivelyGo
  • Updated Input Offset Voltage typical value from ±0.7mV to ±0.35mVGo
  • Updated Input Offset Voltage Temperature Drift typical value from ±2μV/°C to 2.5μV/°CGo
  • Updated Input Bias Current typical values from −1.2μA to 0.4μA and from 0.45μA to 0.4μAGo
  • Updated Input Offset Current from 20nA to 7nAGo
  • Updated Output Voltage Swing High for RL= 2kΩ VID= 100mV typical value from 100mV to 50mVGo
  • Updated Output Voltage Swing Low for VID= −100mV typical value from 20mV to 50mVGo
  • Updated Output Voltage Swing Low for RL= 2kΩ VID= −100mV typical value from 40mV to 50mVGo
  • Updated Supply Current typical value from 0.95mA to 1.35mA and maximum value for TA= –40°C to +125°C from 1.9mA to 2.23mA and maximum value from 1.3mA to 1.93mAGo
  • Updated Slew Rate from 8.5V/μs to 35V/μsGo
  • Updated Unity Gain Frequency 7.5MHz to 11MHzGo
  • Updated Unity Gain Bandwidth 16MHz to 24MHzGo
  • Updated Total Harmonic Distortion + Noise from −77dB to −113dBGo
  • Updated CMRR test conditions, typical and minimum values from 70dB to 109dBGo
  • Removed CMVR parameter from 20mV to 50mVGo
  • Added VCM parameter.Go
  • Updated AVOL test conditions and typical values from 65dB to 75dBGo
  • Updated AVOL test conditions and typical values from 62dB to 70dBGo
  • Updated AVOL test conditions and typical values from 59dB to 65dBGo
  • Updated AVOL test conditions and typical values from 55dB to 62dBGo
  • Updated IOUT test conditions and min values from 30mA to ±40mAGo
  • Updated IOUT test conditions and min values from 20mA to ±35mAGo
  • Updated IOUT test conditions and min values from 40mA to ±20mAGo
  • Updated IOUT test conditions and min values from 30mA to ±20mAGo
  • Updated IOUT test conditions and typical values from 48mA to ±85mAGo
  • Updated IOUT test conditions and typical values from 65mA to ±60mAGo
  • Deleted ±5-V Electrical Characteristics sectionGo
  • Deleted ±15-V Electrical Characteristics sectionGo
  • Updated Typical Characteristics section per New Die specificationsGo
  • Removed Estimating the Output Voltage Swing sectionGo
  • Updated Output Short Circuit Current and Dissipation Issues Go
  • Added Electrical Overstress sectionGo
  • Added Old Versus New Die Comparison sectionGo

Changes from Revision D (March 2013) to Revision E (September 2015)

  • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

Changes from Revision C (May 2008) to Revision D (March 2013)

  • Changed layout of National Semiconductor Datasheet to TI formatGo