SNOSDD6 September   2021 LM74700-EP

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 Reverse Current Protection Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP, input and output capacitance
      3. 9.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 9.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 9.2.5 Application Curves
    3. 9.3 OR-ing Application Configuration
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.2 MOSFET Selection

The important MOSFET electrical parameters are the maximum continuous drain current, ID, the maximum drain-to-source voltage, VDS(MAX), and the maximum source current through body diode and the drain-to-source On resistance RDSON.

The maximum continuous drain current, ID, rating must exceed the maximum continuous load current. The maximum drain-to-source voltage, VDS(MAX), must be high enough to withstand the highest differential voltage seen in the application. This would include any anticipated fault conditions. TI recommends to use MOSFETs with voltage rating up to 60-V maximum with the LM74700-EP because anode-cathode maximum voltage is 65 V. The maximum VGS LM74700-EP can drive is 13 V, so a MOSFET with 15-V minimum VGS must be selected. If a MOSFET with < 15-V VGS rating is selected, a zener diode can be used to clamp VGS to safe level. During startup, inrush current flows through the body diode to charge the bulk hold-up capacitors at the output. The maximum source current through the body diode must be higher than the inrush current that can be seen in the application.

To reduce the MOSFET conduction losses, lowest possible RDS(ON) is preferred, but selecting a MOSFET based on low RDS(ON) can not always be beneficial. Higher RDS(ON) will provide increased voltage information to LM74700-EP's reverse comparator at a lower reverse current. Reverse current detection is better with increased RDS(ON). TI recommends to operate the MOSFET in regulated conduction mode during nominal load conditions and select RDS(ON), such that at nominal operating current, forward voltage drop VDS is close to 20-mV regulation point and not more than 50 mV.

As a guideline, TI suggests to choose (20 mV / ILoad(Nominal)) ≤ RDS(ON) ≤ ( 50 mV / ILoad(Nominal)).

MOSFET manufacturers usually specify RDS(ON) at 4.5-V VGS and 10-V VGS. RDS(ON) increases drastically below 4.5-V VGS and RDS(ON) is highest when VGS is close to MOSFET Vth. For stable regulation at light load conditions, TI recommends to operate the MOSFET close to 4.5-V VGS, that is, much higher than MOSFET gate threshold voltage. TI recommends to choose MOSFET gate threshold voltage Vth of 2-V to 2.5-V maximum. Choosing a lower Vth MOSFET also reduces the turn ON time.

Based on the design requirements, preferred MOSFET ratings are:

  • 60-V VDS(MAX) and ±20-V VGS(MAX)
  • RDS(ON) at 3-A nominal current: (20 mV / 3A ) ≤ RDS(ON) ≤ ( 50 mV / 3A ) = 6.67 mΩ ≤ RDS(ON) ≤ 16.67 mΩ.
  • MOSFET gate threshold voltage Vth: 2-V maximum

DMT6007LFG MOSFET from Diodes Inc. is selected to meet this 12-V reverse battery protection design requirements and it is rated at:

  • 60-V VDS(MAX) and ±20-V VGS(MAX)
  • RDS(ON) 6.5-mΩ typical and 8.5-mΩ maximum rated at 4.5-V VGS
  • MOSFET Vth: 2-V maximum

Thermal resistance of the MOSFET must be considered against the expected maximum power dissipation in the MOSFET to ensure that the junction temperature (TJ) is well controlled.