Product details

Vin (Min) (V) 3.2 Vin (Max) (V) 65 Features Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (Typ) (mA) 0.08 Iq (Max) (mA) 0.13 IGate source (Typ) (uA) 11000 IGate sink (Typ) (mA) 2370 IGate pulsed (Typ) (A) 2.3 Operating temperature range (C) -50 to 125 VSense reverse (Typ) (mV) -11 Design support EVM Rating HiRel Enhanced Product Channel(s) controlled (#) 1 FET External
Vin (Min) (V) 3.2 Vin (Max) (V) 65 Features Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (Typ) (mA) 0.08 Iq (Max) (mA) 0.13 IGate source (Typ) (uA) 11000 IGate sink (Typ) (mA) 2370 IGate pulsed (Typ) (A) 2.3 Operating temperature range (C) -50 to 125 VSense reverse (Typ) (mV) -11 Design support EVM Rating HiRel Enhanced Product Channel(s) controlled (#) 1 FET External
SOT-23-THN (DDF) 8 8 mm² 2.9 x 2.8
  • 3.2-V to 65-V Input range (3.9-V startup)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2.3-A peak gate turnoff current
  • Fast response to reverse current blocking: < 0.75 µs
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in 8 pin SOT-23 package 2.90 mm × 1.60 mm
  • Military temperature range –55°C to +125°C
  • One fabrication, assembly and test site
  • Extended product life cycle
  • Extended product change notification
  • Product traceability
  • 3.2-V to 65-V Input range (3.9-V startup)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2.3-A peak gate turnoff current
  • Fast response to reverse current blocking: < 0.75 µs
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in 8 pin SOT-23 package 2.90 mm × 1.60 mm
  • Military temperature range –55°C to +125°C
  • One fabrication, assembly and test site
  • Extended product life cycle
  • Extended product change notification
  • Product traceability

The LM74700-EP is an ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V and 48-V systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during power fail and input micro-short conditions.

The LM74700-EP controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700-EP helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current. The LM74700-EP is fully specified over the temperature range of TA = –55°C to +125°C.

The LM74700-EP is an ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V and 48-V systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during power fail and input micro-short conditions.

The LM74700-EP controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700-EP helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current. The LM74700-EP is fully specified over the temperature range of TA = –55°C to +125°C.

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Technical documentation

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* Data sheet LM74700-EP Low IQ Ideal Diode Controller datasheet PDF | HTML 01 Sep 2021
* Radiation & reliability report LM74700-EP Reliability Report PDF | HTML 01 Sep 2021

Design & development

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Evaluation board

LM74700DDFEVM — LM74700-Q1 3.2-V to 65-V, 80-μA IQ automotive ideal diode controller (DDF package) evaluation module

The LM74700DDFEVM helps designers evaluate the operation and performance of the LM74700-Q1 3.2-V to 65-V, 80-μA IQ automotive ideal diode controller (DDF package). This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and (...)

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Simulation model

LM74700-Q1 PSpice Transient Model

SNOM667.ZIP (64 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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SOT-23-THIN (DDF) 8 View options

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