SNWS018D December   2006  – June 2016 LMV221

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 2.7-V DC and AC Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Characteristics of the LMV221
      2. 7.3.2 Accurate Power Measurement
        1. 7.3.2.1 Concept of Power Measurements
        2. 7.3.2.2 LOG-Conformance Error
        3. 7.3.2.3 Temperature Drift Error
          1. 7.3.2.3.1 Temperature Compensation
          2. 7.3.2.3.2 Differential Power Errors
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown
        1. 7.4.1.1 Output Behavior in Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Functionality and Applications of RF Power Detectors
        1. 8.1.1.1 Functionality of RF Power Detectors
          1. 8.1.1.1.1 Key Characteristics of RF Power Detectors
          2. 8.1.1.1.2 Types of RF Power Detectors
            1. 8.1.1.1.2.1 Diode Detector
            2. 8.1.1.1.2.2 (Root) Mean Square (R)MS) Detector
            3. 8.1.1.1.2.3 Logarithmic Detectors
    2. 8.2 Typical Applications
      1. 8.2.1 Application With Transmit Power Control Loop
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Detector Interfacing
            1. 8.2.1.2.1.1 RF Input
            2. 8.2.1.2.1.2 Output and Reference
              1. 8.2.1.2.1.2.1 Filtering
            3. 8.2.1.2.1.3 Interface to the ADC
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Application With Voltage Standing Wave Ratio (VSWR) Measurement
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Supply Lines
        1. 10.1.1.1 Positive Supply (VDD)
        2. 10.1.1.2 Ground (GND)
      2. 10.1.2 RF Input Interface
      3. 10.1.3 Microstrip Configuration
      4. 10.1.4 GCPW Configuration
      5. 10.1.5 Reference (REF)
      6. 10.1.6 Output (OUT)
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
SUPPLY VOLTAGE
 VDD - GND 3.6 V
RF INPUT
 Input power 10 dBm
 DC voltage 400 mV
Enable input voltage VSS – 0.4 V < VEN < VDD + 0.4 V
Junction temperature(2) 150 °C
Maximum lead temperature (soldering, 10 seconds) 260 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The maximum power dissipation is a function of TJ(MAX) , RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±2000
Machine model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage 2.7 3.3 V
Ambient temperature –40 85 °C
RF frequency 50 3500 MHz
RF input power(1) –45 –5 dBm
–58 –18 dBV
(1) Power in dBV = dBm + 13 when the impedance is 50 Ω.

6.4 Thermal Information

THERMAL METRIC(1) LVM221 UNIT
NGF (WSON)
6 PINS
RθJA Junction-to-ambient thermal resistance(2) 100.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 120 °C/W
RθJB Junction-to-board thermal resistance 7 °C/W
ψJT Junction-to-top characterization parameter 69.6 °C/W
ψJB Junction-to-board characterization parameter 6.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 69.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX) , RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board.

6.5 2.7-V DC and AC Electrical Characteristics

Unless otherwise specified, all limits are ensured at TA = 25°C, VDD = 2.7 V, RF input frequency ƒ = 1855-MHz continuous wave (CW), modulated.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SUPPLY INTERFACE
IDD Supply current Active mode: EN = high, no signal present at RFIN 6.5 7.2 8.5 mA
Active mode: EN = high, no signal present at RFIN
TA = –40°C to 85°C
5 10
Shutdown: EN = low, no signal present at RFIN 0.5 3 µA
Shutdown: EN = low, no signal present at RFIN
TA = –40°C to 85°C
4
EN = Low: PIN = 0 dBm(4)
TA = –40°C to 85°C
10
LOGIC ENABLE INTERFACE
VLOW EN logic low input level
(shutdown mode)
TA = –40°C to 85°C 0.6 V
VHIGH EN logic high input level TA = –40°C to 85°C 1.1 V
IEN Current into EN pin TA = –40°C to 85°C 1 µA
RF INPUT INTERFACE
RIN Input resistance 40 47.1 60 Ω
OUTPUT INTERFACE
VOUT Output voltage swing From positive rail, sourcing,
VREF = 0 V, IOUT = 1 mA
16 40 mV
From positive rail, sourcing,
VREF = 0 V, IOUT = 1 mA
TA = –40°C to 85°C
50
From negative rail, sinking,
VREF = 2.7 V, IOUT = 1 mA
14 40
From negative rail, sinking,
VREF = 2.7 V, IOUT = 1 mA
TA = –40°C to 85°C
50
IOUT Output short circuit current Sourcing, VREF = 0 V, VOUT = 2.6 V 3 5.4 mA
Sourcing, VREF = 0 V, VOUT = 2.6 V
TA = –40°C to 85°C
2.7
Sinking, VREF = 2.7 V, VOUT = 0.1 V 3 5.7
Sinking, VREF = 2.7 V, VOUT = 0.1 V
TA = –40°C to 85°C
2.7
BW Small signal bandwidth No RF input signal. Measured from REF input current to VOUT 450 kHz
RTRANS Output amplifier transimpedance gain No RF input signal, from IREF to VOUT, DC 35 42.7 55
SR Slew rate Positive, VREF from 2.7 V to 0 V 3 4.1 V/µs
Positive, VREF from 2.7 V to 0 V
TA = –40°C to 85°C
2.7
Negative, VREF from 0 V to 2.7 V 3 4.2
Negative, VREF from 0 V to 2.7 V
TA = –40°C to 85°C
2.7
ROUT Output impedance(4) No RF input signal, EN = High, DC measurement 0.6 5 Ω
No RF input signal, EN = High, DC measurement
TA = –40°C to 85°C
6
IOUT,SD Output leakage current in shutdown mode EN = Low, VOUT = 2 V 21 300 nA
EN = Low, VOUT = 2 V
TA = –40°C to 85°C
500
RF DETECTOR TRANSFER
VOUT,MAX Maximum output voltage(4) ƒ = 50 MHz, PIN= −5 dBm 1.76 V
ƒ = 50 MHz, PIN= −5 dBm
TA = –40°C to 85°
1.67 1.83
ƒ = 900 MHz, PIN= −5 dBm 1.75
ƒ = 900 MHz, PIN= −5 dBm
TA = –40°C to 85°C
1.67 1.82
ƒ = 1855 MHz, PIN= −5 dBm 1.61
ƒ = 1855 MHz, PIN= −5 dBm
TA = –40°C to 85°C
1.53 1.68
ƒ = 2500 MHz, PIN= −5 dBm 1.49
ƒ = 2500 MHz, PIN= −5 dBm
TA = –40°C to 85°C
1.42 1.57
ƒ = 3000 MHz, PIN= −5 dBm 1.4
ƒ = 3000 MHz, PIN= −5 dBm
TA = –40°C to 85°C
1.33 1.48
ƒ = 3500 MHz, PIN= −5 dBm 1.28
ƒ = 3500 MHz, TA = –40°C to 85°C 1.21 1.36
VOUT,MIN Minimum output voltage (pedestal) No input signal 175 250 350 mV
No input signal, TA = –40°C to 85°C 142 388
Pedestal variation over temperature No input signal, relative to 25°C
TA = –40°C to 85°C
–20 20
ΔVOUT Output voltage range(4) ƒ = 50 MHz, PIN from −45 dBm to −5 dBm 1.44 V
ƒ = 50 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to 85°C
1.37 1.52
ƒ = 900 MHz, PIN from −45 dBm to −5 dBm 1.4
ƒ = 900 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to 85°C
1.34 1.47
ƒ = 1855 MHz, PIN from −45 dBm to −5 dBm 1.3
ƒ = 1855 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to +85°C
1.24 1.37
ƒ = 2500 MHz, PIN from −45 dBm to −5 dBm 1.2
ƒ = 2500 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to 85°C
1.14 1.3
ƒ = 3000 MHz, PIN from −45 dBm to −5 dBm 1.12
ƒ = 3000 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to 85°C
1.07 1.2
ƒ = 3500 MHz, PIN from −45 dBm to −5 dBm 1.01
ƒ = 3500 MHz, PIN from −45 dBm to −5 dBm
TA = –40°C to 85°C
0.96 1.09
KSLOPE Logarithmic slope(4) ƒ = 50 MHz 39 40.5 42 mV/dB
ƒ = 900 MHz 36.7 38.5 40
ƒ = 1855 MHz 34.4 35.7 37.1
ƒ = 2500 MHz 32.6 33.8 35.2
ƒ = 3000 MHz 31 32.5 34
ƒ = 3500 MHz 30 31.9 33.5
PINT Logarithmic intercept(4) ƒ = 50 MHz –50.4 −49.4 –48.3 dBm
ƒ = 900 MHz –54.1 −52.8 –51.6
ƒ = 1855 MHz –53.2 −51.7 –50.2
ƒ = 2500 MHz –51.8 −50 –48.3
ƒ = 3000 MHz –51.1 −48.9 –46.6
ƒ = 3500 MHz –49.6 −46.8 –44.1
en Output referred noise(5) PIN = −10 dBm at 10 kHz 1.5 µV/√Hz
vN Output referred noise(4) Integrated over frequency band, 1 kHz to 6.5 kHz 100 µVRMS
Integrated over frequency band, 1 kHz to 6.5 kHz
TA = –40°C to 85°C
150
PSRR Power supply rejection ratio(5) PIN = −10 dBm, ƒ = 1800 MHz 60 dB
PIN = −10 dBm, ƒ = 1800 MHz
TA = –40°C to 85°C
55
POWER MEASUREMENT PERFORMANCE
ELC Log conformance error(4) ƒ = 50 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–0.6 0.56 dB
ƒ = 50 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.1 0.53 1.3
ƒ = 900 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–0.7 0.37
ƒ = 900 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.24 0.46 1.1
ƒ = 1855 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–0.4 0.24
ƒ = 1855 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.1 0.48 1.1
ƒ = 2500 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–0.43 0.56
ƒ = 2500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1 0.51 1.1
ƒ = 3000 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–0.87 1.34
ƒ = 3000 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.2 0.56 1.6
ƒ = 3500 MHz
−40 dBm ≤ PIN ≤ −10 dBm
–1.73 2.72
ƒ = 3500 MHz, TA = –40°C to 85°C –2 0.84 2.7
EVOT Variation over temperature(4) ƒ = 50 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.1 0.4 1.4 dB
ƒ = 900 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1 0.38 1.27
ƒ = 1855 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.1 0.44 1.31
ƒ = 2500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.1 0.48 1.15
ƒ = 3000 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.2 0.5 0.98
ƒ = 3500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–1.2 0.62 0.85
E1 dB Measurement error for a 1-dB Input power step(4) ƒ = 50 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.06 0.069 dB
ƒ = 900 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.056 0.056
ƒ = 1855 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.069 0.069
ƒ = 2500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.084 0.084
ƒ = 3000 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.092 0.092
ƒ = 3500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.1 0.1
E10 dB Measurement Error for a 10-dB Input power step (4) ƒ = 50 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.65 0.57 dB
ƒ = 900 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.75 0.58
ƒ = 1855 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.88 0.72
ƒ = 2500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.86 0.75
ƒ = 3000 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.85 0.77
ƒ = 3500 MHz, TA = –40°C to 85°C
−40 dBm ≤ PIN ≤ −10 dBm
–0.76 0.74
ST Temperature sensitivity ƒ = 50 MHz, −40 dBm ≤ PIN ≤ −10 dBm –7 mdB/°C
ƒ = 50 MHz, −40°C < TA < 25°C
(4)
–15 1
ƒ = 900 MHz,−40 dBm ≤ PIN ≤ −10 dBm –6
ƒ = 900 MHz, −40°C < TA < 25°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–13.4 1.5
ƒ = 1855 MHz, −40 dBm ≤ PIN ≤ −10 dBm –5.9
ƒ = 1855 MHz, −40°C < TA < 25°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–14.1 2.3
ƒ = 2500 MHz,−40 dBm ≤ PIN ≤ −10 dBm –4.1
ƒ = 2500 MHz, −40°C < TA < 25°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–13.4 5.2
ƒ = 3000 MHz, −40 dBm ≤ PIN ≤ −10 dBm –1.8
ƒ = 3000 MHz, −40°C < TA < 25°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–11.7 8
ƒ = 3500 MHz, −40 dBm ≤ PIN ≤ −10 dBm 0.5
ƒ = 3500 MHz, −40°C < TA < 25°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–10.5 1.2
ST Temperature sensitivity ƒ = 50 MHz, −40 dBm ≤ PIN ≤ −10 dBm –6.7 mdB/°C
ƒ = 50 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–12.3 –1.1
ƒ = 900 MHz, −40 dBm ≤ PIN ≤ −10 dBm –6.7
ƒ = 900 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–13.1 –0.2
ƒ =1855 MHz, −40 dBm ≤ PIN ≤ −10 dBm –7.1
ƒ =1855 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–14.7 0.42
ƒ = 2500 MHz,−40 dBm ≤ PIN ≤ −10 dBm –7.6
ƒ = 2500 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–15.9 0.63
ƒ = 3000 MHz, −40 dBm ≤ PIN ≤ −10 dBm –8.5
ƒ = 3000 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm(4)
–18 1
ƒ = 3500 MHz, −40 dBm ≤ PIN ≤ −10 dBm –9.5
ƒ = 3500 MHz, 25°C < TA < 85°C
−40 dBm ≤ PIN ≤ −10 dBm (4)
–21.2 2.5
ST Temperature sensitivity(4) ƒ = 50 MHz, PIN = −10 dBm –8.3 mdB/°C
ƒ = 50 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–15.8 –0.75
ƒ = 900 MHz, PIN = −10 dBm –6
ƒ = 900 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–14.2 2.2
ƒ = 1855 MHz, PIN = −10 dBm –7.4
ƒ = 1855 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–14.9 2
ƒ = 2500 MHz, PIN = −10 dBm –6.6
ƒ = 2500 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–14.5 1.3
ƒ = 3000 MHz, PIN = −10 dBm –4.9
ƒ = 3000 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–13 3.3
ƒ = 3500 MHz, PIN = −10 dBm –3.4
ƒ = 3500 MHz, –40°C < TA < 25°C
PIN = −10 dBm(4)
–12 5.3
ST Temperature sensitivity(4) ƒ = 50 MHz, PIN = −10 dBm –8.9 mdB/°C
ƒ = 50 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–12.4 –5.3
ƒ = 900 MHz, PIN = −10 dBm –9.4
ƒ = 900 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–13.7 –5
ƒ = 1855 MHz, PIN = −10 dBm –10
ƒ = 1855 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–14.6 –5.6
ƒ = 2500 MHz, PIN = −10 dBm –10.8
ƒ = 2500 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–15.2 –6.5
ƒ = 3000 MHz, PIN = −10 dBm –12.2
ƒ = 3000 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–16.5 –7.9
ƒ = 3500 MHz, PIN = −10 dBm –13.5
ƒ = 3500 MHz, 25°C < TA < 85°C
PIN = −10 dBm(4)
–18.1 –9
PMAX Maximum input power
for ELC = 1 dB(4)
ƒ = 50 MHz –5.9 dBm
ƒ = 50 MHz, TA = –40°C to 85°C –8.85
ƒ = 900 MHz –6.1
ƒ = 900 MHz, MIN at TA = –40°C to 85°C –9.3
ƒ = 1855 MHz –5.5
ƒ = 1855 MHz, TA = –40°C to 85°C –8.3
ƒ = 2500 MHz –4.2
ƒ = 2500 MHz, TA = –40°C to 85°C –6
ƒ = 3000 MHz –3.7
ƒ = 3000 MHz, TA = –40°C to 85°C –5.4
ƒ = 3500 MHz –2.7
ƒ = 3500 MHz, TA = –40°C to 85°C –7.2
PMIN Minimum input power for ELC = 1 dB(4) ƒ = 50 MHz –40.3 dBm
ƒ = 50 MHz, TA = –40°C to 85°C –38.9
ƒ = 900 MHz –44.2
ƒ = 900 MHz, MIN at TA = –40°C to 85°C –42.9
ƒ = 1855 MHz –42.9
ƒ = 1855 MHz, TA = –40°C to 85°C –41.2
ƒ = 2500 MHz –40.4
ƒ = 2500 MHz, TA = –40°C to 85°C –38.6
ƒ = 3000 MHz –38.4
ƒ = 3000 MHz, TA = –40°C to 85°C –35.8
ƒ = 3500 MHz –35.3
ƒ = 3500 MHz, TA = –40°C to 85°C –31.9
DR Dynamic range for ELC = 1 dB(4) ƒ = 50 MHz 34.5 dB
ƒ = 50 MHz, TA = –40°C to 85°C 31.5
ƒ = 900 MHz 38.1
ƒ = 900 MHz, MIN at TA = –40°C to 85°C 34.4
ƒ = 1855 MHz 37.4
ƒ = 1855 MHz, TA = –40°C to 85°C 34
ƒ = 2500 MHz 36.1
ƒ = 2500 MHz, TA = –40°C to 85°C 33.8
ƒ = 3000 MHz 34.8
ƒ = 3000 MHz, TA = –40°C to 85°C 32.4
ƒ = 3500 MHz 32.7
ƒ = 3500 MHz, TA = –40°C to 85°C 26.2
(1) 2.7-V DC and AC Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are ensured by test or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not specified on shipped production material.
(4) All limits are ensured by design and measurements which are performed on a limited number of samples. Limits represent the mean ±3–sigma values. The typical value represents the statistical mean value.
(5) This parameter is ensured by design and/or characterization and is not tested in production.

6.6 Timing Requirements

MIN NOM MAX UNIT
tON Turnon time, no signal at PIN, low-high transition EN, VOUT to 90%(1) 8 10 µs
Turnon time, no signal at PIN, low-high transition EN, VOUT to 90%(1)
TA = –40°C to 85°C
12
tR Rise time(2), PIN = no signal to 0 dBm, VOUT from 10% to 90% 2 µs
Rise time(2), PIN = no signal to 0 dBm, VOUT from 10% to 90%
TA = –40°C to 85°C
12
tF Fall time(2), PIN = no signal to 0 dBm, VOUT from 90% to 10% 2 µs
Fall time(2), PIN = no signal to 0 dBm, VOUT from 90% to 10%
TA = –40°C to 85°C
12
(1) All limits are ensured by design and measurements, which are performed on a limited number of samples. Limits represent the mean ±3-sigma values. The typical value represents the statistical mean value.
(2) This parameter is ensured by design and/or characterization and is not tested in production.

6.7 Typical Characteristics

Unless otherwise specified, VDD = 2.7V, TA = 25°C, measured on a limited number of samples.
LMV221 20173705.gif
Figure 1. Supply Current vs Supply Voltage
LMV221 20173712.gif
Figure 3. Output Voltage vs RF Input Power
LMV221 20173749.gif
Figure 5. Log Intercept vs Frequency
LMV221 20173714.gif
50 MHz
Figure 7. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173715.gif
1855 MHz
Figure 9. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173718.gif
3000 MHz
Figure 11. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173762.gif
50 MHz
Figure 13. Log Conformance Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173764.gif
1855 MHz
Figure 15. Log Conformance Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173769.gif
3000 MHz
Figure 17. Log Conformance Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173720.gif
50 MHz
Figure 19. Mean Temperature Drift Error vs Rf Input Power At 50 MHz
LMV221 20173722.gif
1855 MHz
Figure 21. Mean Temperature Drift Error vs RF Input Power
LMV221 20173724.gif
3000 MHz
Figure 23. Mean Temperature Drift Error vs RF Input Power
LMV221 20173750.gif
50 MHz
Figure 25. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173752.gif
1855 MHz
Figure 27. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173754.gif
3000 MHz
Figure 29. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173726.gif
50 MHz
Figure 31. Error For 1-dB Input Power Step vs RF Input Power
LMV221 20173728.gif
1855 MHz
Figure 33. Error For 1-dB Input Power Step vs RF Input Power
LMV221 20173730.gif
3000 MHz
Figure 35. Error For 1-dB Input Power Step vs RFInput Power
LMV221 20173732.gif
50 MHz
Figure 37. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173734.gif
1855 MHz
Figure 39. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173736.gif
3000 MHz
Figure 41. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173738.gif
50 MHz
Figure 43. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173740.gif
1855 MHz
Figure 45. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173742.gif
3000 MHz
Figure 47. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173756.gif
50 MHz
Figure 49. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173758.gif
1855 MHz
Figure 51. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173760.gif
3000 MHz
Figure 53. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173772.gif
900 MHz
Figure 55. Output Voltage and Log Conformance Error vs RR Input Power for Various Modulation Types
LMV221 20173748.gif
Figure 57. RF Input Impedance vs Frequency (Resistance and Reactance)
LMV221 20173747.gif
Figure 59. Power Supply Rejection Ratio vs Frequency
LMV221 20173709.gif
Figure 61. Sourcing Output Current vs Output Voltage
LMV221 20173711.gif
Figure 63. Output Voltage vs Sourcing Current
LMV221 20173708.gif
Figure 2. Supply Current vs Enable Voltage
LMV221 20173746.gif
Figure 4. Log Slope vs Frequency
LMV221 20173713.gif
Figure 6. Output Voltage vs Frequency
LMV221 20173716.gif
900 MHz
Figure 8. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173717.gif
2500 MHz
Figure 10. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173719.gif
3500 MHz
Figure 12. Mean Output Voltage and Log Conformance Error vs RF Input Power
LMV221 20173763.gif
900 MHz
Figure 14. Log Conformance Error (Mean ±3 Sigma) vs RF Input Powert
LMV221 20173768.gif
2500 MHz
Figure 16. Log Conformance Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173767.gif
3500 MHz
Figure 18. Log Conformance Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173721.gif
900 MHz
Figure 20. Mean Temperature Drift Error vs RF Input Power
LMV221 20173723.gif
2500 MHz
Figure 22. Mean Temperature Drift Error vs RF Input Powert
LMV221 20173725.gif
3500 MHz
Figure 24. Mean Temperature Drift Error vs RF Input Power
LMV221 20173751.gif
900 MHz
Figure 26. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173753.gif
2500 MHz
Figure 28. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173755.gif
3500 MHz
Figure 30. Temperature Drift Error (Mean ±3 Sigma) vs RF Input Power
LMV221 20173727.gif
900 MHz
Figure 32. Error For 1-dB Input Power Step vs RF Input Power
LMV221 20173729.gif
2500 MHz
Figure 34. Error For 1-dB Input Power Step vs RF Input Power
LMV221 20173731.gif
3500 MHz
Figure 36. Error For 1-dB Input Power Step vs RF Input Power
LMV221 20173733.gif
900 MHz
Figure 38. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173735.gif
2500 MHz
Figure 40. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173737.gif
3500 MHz
Figure 42. Error For 10-dB Input Power Step vs RF Input Power
LMV221 20173739.gif
900 MHz
Figure 44. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173741.gif
2500 MHz
Figure 46. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173743.gif
3500 MHz
Figure 48. Mean Temperature Sensitivity vs RF Input Power
LMV221 20173757.gif
900 MHz
Figure 50. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173759.gif
2500 MHz
Figure 52. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173761.gif
3500 MHz
Figure 54. Temperature Sensitivity (Mean ±3 Sigma) vs RF Input Power
LMV221 20173773.gif
1855 MHz
Figure 56. Output Voltage and Log Conformance Error vs RF Input Power for Various Modulation Types
LMV221 20173745.gif
Figure 58. Output Noise Spectrum vs Frequency
LMV221 20173707_nws018.gif
Figure 60. Output Amplifier Gain and Phase vs Frequency
LMV221 20173710.gif
Figure 62. Sinking Output Current vs Output Voltage
LMV221 20173706.gif
Figure 64. Output Voltage vs Sinking Current