SLASF12D February   2023  – October 2025 MSPM0G3105 , MSPM0G3106 , MSPM0G3107

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Ramp
      1. 7.6.1 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
        1. 7.9.1.1 SYSOSC Typical Frequency Accuracy
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 System Phase Lock Loop (SYSPLL)
      4. 7.9.4 Low Frequency Crystal/Clock
      5. 7.9.5 High Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1 Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
    13. 7.13 Typical Connection Diagram
    14. 7.14 Temperature Sensor
    15. 7.15 VREF
      1. 7.15.1 Voltage Characteristics
      2. 7.15.2 Electrical Characteristics
    16. 7.16 GPAMP
      1. 7.16.1 Electrical Characteristics
      2. 7.16.2 Switching Characteristics
    17. 7.17 I2C
      1. 7.17.1 I2C Timing Diagram
      2. 7.17.2 I2C Characteristics
      3. 7.17.3 I2C Filter
    18. 7.18 SPI
      1. 7.18.1 SPI
      2. 7.18.2 SPI Timing Diagram
    19. 7.19 UART
    20. 7.20 TIMx
    21. 7.21 TRNG
      1. 7.21.1 TRNG Electrical Characteristics
      2. 7.21.2 TRNG Switching Characteristics
    22. 7.22 Emulation and Debug
      1. 7.22.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0G310x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 GPAMP
    16. 8.16 TRNG
    17. 8.17 AES
    18. 8.18 CRC
    19. 8.19 UART
    20. 8.20 I2C
    21. 8.21 SPI
    22. 8.22 CAN-FD
    23. 8.23 WWDT
    24. 8.24 RTC
    25. 8.25 Timers (TIMx)
    26. 8.26 Device Analog Connections
    27. 8.27 Input/Output Diagrams
    28. 8.28 Serial Wire Debug Interface
    29. 8.29 Bootstrap Loader (BSL)
    30. 8.30 Device Factory Constants
    31. 8.31 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.8 Flash Memory

A single bank of non-volatile flash memory is provided for storing executable program code and application data.

Key features of the flash include:

  • Hardware ECC protection (encode and decode) with single bit error correction and double-bit error detection
  • In-circuit program and erase operations supported across the entire recommended supply range
  • Small 1KB sector sizes (minimum erase resolution of 1KB)
  • Up to 32 application-chosen sectors of flash address space can be used as high endurance sectors to enable EEPROM emulation applications.This includes sectors from the main bank(s) and optional data bank. In devices with data bank, it is possible to use some sectors from the data bank and the rest from the main bank(s) as high endurance sectors.On devices with <=32kB flash memory, the entire flash memory supports NWEC(HI_ENDURANCE) erase/program cycles

For a complete description of the flash memory, see the NVM chapter of the technical reference manual.