SBOS556D June   2011  – August 2020 OPA171-Q1 , OPA2171-Q1 , OPA4171-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions : OPA171-Q1 and OPA2171-Q1
    2.     Pin Functions : OPA4171-Q1
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information — OPA171-Q1 and OPA2171-Q1
    5. 6.5 Thermal Information — OPA4171-Q1
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
      1. 6.7.1 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Characteristics
      2. 7.3.2 Phase-Reversal Protection
      3. 7.3.3 Capacitive Load and Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Common-Mode Voltage Range
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Electrical Overstress
    2. 8.2 Typical Application
      1. 8.2.1 Capacitive Load Drive Solution Using an Isolation Resistor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

at TA = 25°C, VS = 2.7 V to 36 V, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OFFSET VOLTAGE
VOSInput offset voltage0.25±1.8mV
Input offset voltage over temperatureTA = –40°C to 125°C0.3±2mV
dVOS/dTInput offset voltage drift
(over temperature)		TA = –40°C to 125°C0.3
±2(2)µV/°C
PSRRInput offset voltage over temperature vs power supplyVS = 4.5 V to 36 V120±3µV/V
Channel separation, DC5µV/V
INPUT BIAS CURRENT
IBInput bias current±8
±15pA
Input bias current over temperature±3.5nA
IOSInput offset current±4pA
Input offset current over temperature±3.5nA
NOISE
Input voltage noisef = 0.1 Hz to 10 Hz3µVPP
enInput voltage noise densityf = 100 Hz25nV/√ Hz
f = 1 kHz14nV/√ Hz
INPUT VOLTAGE
VCMCommon-mode voltage range(1)(V–) – 0.1(V+) – 2V
CMRRCommon-mode rejection ratio (over temperature)VS = ±2.25 V
(V–) – 0.1 V < VCM < (V+) – 2 V		90104
dB
VS = ±18 V
(V–) – 0.1 V < VCM < (V+) – 2 V		104120
dB
INPUT IMPEDANCE
Differential100 || 3MΩ || pF
Common-mode6 || 31012Ω || pF
OPEN-LOOP GAIN
AOLOpen-loop voltage gain (over temperature)VS = 4.5 V to 36 V
(V–) + 0.35 V < VO < (V+) – 0.35 V		110
130dB
FREQUENCY RESPONSE
GBPGain bandwidth product3MHz
SRSlew rateG = 11.5V/µs
tSSettling timeTo 0.1%, VS = ±18 V
G = 1, 10-V step		6µs
To 0.01% (12 bit), VS = ±18 V
G = 1, 10-V step		10µs
Overload recovery timeV±IN × Gain > VS2µs
THD+NTotal harmonic distortion + noiseG = 1, f = 1 kHz
VO = 3 VRMS		0.0002%
OUTPUT
VOVoltage output swing from rail (over temperature)RL = 10 kΩ
AOL ≥ 110 dB		(V–) + 0.35(V+) – 0.35V
ISCShort-circuit currentSourcing25mA
Sinking–37
CLOADCapacitive load driveSee Section 6.7pF
ROOpen-loop output resistancef = 1 MHz, IO = 0 A150Ω
POWER SUPPLY
VSSpecified voltage rangeTA = –40°C to 125°C4.536V
IQQuiescent current per amplifierIO = 0 A, TA = –40°C to 125°C475595
µA
(1) The input range can be extended beyond (V+) – 2 V up to V+ at reduced performance. See Section 6.7 and Section 7 for additional information.
(2) Not production tested.