SLLS562O august   2009  – july 2023 SN65HVD3082E , SN65HVD3085E , SN65HVD3088E , SN75HVD3082E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information, SN65HVD308xE
    5. 6.5  Thermal Information, SNx5HVD3082E
    6. 6.6  Electrical Characteristics: Driver
    7. 6.7  Electrical Characteristics: Receiver
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics: Driver
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Fail-safe
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power Usage in an RS-485 Transceiver
        2. 9.2.2.2 Low-Power Shutdown Mode
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations for IC Packages
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Electrical Characteristics: Receiver

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYP(1)MAXUNIT
VIT+Positive-going differential input threshold voltageIO = –8 mA–85–10mV
VIT–Negative-going differential input threshold voltageIO = 8 mA–200–115mV
VhysHysteresis voltage (VIT+ – VIT–)30mV
VOHHigh-level output voltageVID = 200 mV, IOH = –8 mA (see Figure 7-8)44.6V
VOLLow-level output voltageVID = –200 mV, IO = 8 mA (see Figure 7-8)0.150.4V
IOZHigh-impedance-state output currentVO = 0 or VCC, RE = VCC–11μA
IIBus input currentVIH = 12 V, VCC = 5 V0.040.1mA
VIH = 12 V, VCC = 0 V0.060.125
VIH = –7 V, VCC = 5 V–0.1–0.04
VIH = –7 V, VCC = 0 V–0.05–0.03
IIHHigh-level input current, ( RE)VIH = 2 V–60–30μA
IILLow-level input current, ( RE)VIL = 0.8 V–60–30μA
CdiffDifferential input capacitanceVI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V7pF
(1) All typical values are at 25°C and with a 5-V supply.