SLLSEX9A December   2016  – February 2020 SN65MLVD206B

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic, SN65MLVD206B
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. Table 1.  Absolute Maximum Ratings
    2. Table 2.  ESD Ratings
    3. Table 3.  Recommended Operating Conditions
    4. Table 4.  Thermal Information
    5. Table 5.  Electrical Characteristics
    6. Table 6.  Electrical Characteristics – Driver
    7. Table 7.  Electrical Characteristics – Receiver
    8. Table 8.  Electrical Characteristics – BUS Input and Output
    9. Table 9.  Switching Characteristics – Driver
    10. Table 10. Switching Characteristics – Receiver
    11. 6.1       Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Power-On-Reset
      2. 8.3.2 ESD Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation with VCC < 1.5 V
      2. 8.4.2 Operations with 1.5 V ≤ VCC < 3 V
      3. 8.4.3 Operation with 3 V ≤ VCC < 3.6 V
      4. 8.4.4 Device Function Tables
      5. 8.4.5 Equivalent Input and Output Schematic Diagrams
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Multipoint Communications
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1  Supply Voltage
        2. 9.2.3.2  Supply Bypass Capacitance
        3. 9.2.3.3  Driver Input Voltage
        4. 9.2.3.4  Driver Output Voltage
        5. 9.2.3.5  Termination Resistors
        6. 9.2.3.6  Receiver Input Signal
        7. 9.2.3.7  Receiver Input Threshold (Failsafe)
        8. 9.2.3.8  Receiver Output Signal
        9. 9.2.3.9  Interconnecting Media
        10. 9.2.3.10 PCB Transmission Lines
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip vs. Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
        1.       (a)
        2.       (b)
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Decoupling

Each power or ground lead of a high-speed device should be connected to the PCB through a low inductance path. For best results, one or more vias are used to connect a power or ground pin to the nearby plane. Ideally, via placement is immediately adjacent to the pin to avoid adding trace inductance. Placing a power plane closer to the top of the board reduces the effective via length and its associated inductance.

SN65MLVD206B 12lpcb_sllsen0.gifFigure 27. Low Inductance, High-Capacitance Power Connection

Bypass capacitors should be placed close to VDD pins. They can be placed conveniently near the corners or underneath the package to minimize the loop area. This extends the useful frequency range of the added capacitance. Small-physical-size capacitors, such as 0402, 0201, or X7R surface-mount capacitors should be used to minimize body inductance of capacitors. Each bypass capacitor is connected to the power and ground plane through vias tangent to the pads of the capacitor as shown in Figure 28(a).

An X7R surface-mount capacitor of size 0402 has about 0.5 nH of body inductance. At frequencies above 30 MHz or so, X7R capacitors behave as low-impedance inductors. To extend the operating frequency range to a few hundred MHz, an array of different capacitor values like 100 pF, 1 nF, 0.03 μF, and 0.1 μF are commonly used in parallel. The most effective bypass capacitor can be built using sandwiched layers of power and ground at a separation of 2 to 3 mils. With a 2-mil FR4 dielectric, there is approximately 500 pF per square inch of PCB. Many high-speed devices provide a low-inductance GND connection on the backside of the package. This center pad must be connected to a ground plane through an array of vias. The via array reduces the effective inductance to ground and enhances the thermal performance of the small Surface Mount Technology (SMT) package. Placing vias around the perimeter of the pad connection ensures proper heat spreading and the lowest possible die temperature. Placing high-performance devices on opposing sides of the PCB using two GND planes (as shown in Figure 19) creates multiple paths for heat transfer. Often thermal PCB issues are the result of one device adding heat to another, resulting in a very high local temperature. Multiple paths for heat transfer minimize this possibility. In many cases the GND pad makes the optimal decoupling layout impossible to achieve due to insufficient pad-to-pad spacing as shown in Figure 28(b). When this occurs, placing the decoupling capacitor on the backside of the board keeps the extra inductance to a minimum. It is important to place the VDD via as close to the device pin as possible while still allowing for sufficient solder mask coverage. If the via is left open, solder may flow from the pad and into the via barrel. This will result in a poor solder connection.

(a)

SN65MLVD206B tdcl_a_sllsen0.gif

(b)

SN65MLVD206B tdcl_b_sllsen0.gif
Figure 28. Typical Decoupling Capacitor Layouts