SLLSES9C February   2016  – March 2019 TCAN1042-Q1 , TCAN1042G-Q1 , TCAN1042GV-Q1 , TCAN1042H-Q1 , TCAN1042HG-Q1 , TCAN1042HGV-Q1 , TCAN1042HV-Q1 , TCAN1042V-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Functional Block Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings, Specifications
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Power Rating
    7. 7.7 Electrical Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 TXD Dominant Timeout (DTO)
      2. 9.3.2 Thermal Shutdown (TSD)
      3. 9.3.3 Undervoltage Lockout
      4. 9.3.4 Unpowered Device
      5. 9.3.5 Floating Terminals
      6. 9.3.6 CAN Bus Short Circuit Current Limiting
      7. 9.3.7 Digital Inputs and Outputs
        1. 9.3.7.1 5-V VCC Only Devices (Devices without the "V" Suffix):
        2. 9.3.7.2 5 V VCC with VIO I/O Level Shifting (Devices with the "V" Suffix):
    4. 9.4 Device Functional Modes
      1. 9.4.1 CAN Bus States
      2. 9.4.2 Normal Mode
      3. 9.4.3 Standby Mode
        1. 9.4.3.1 Remote Wake Request via Wake Up Pattern (WUP) in Standby Mode
      4. 9.4.4 Driver and Receiver Function Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Bus Loading, Length and Number of Nodes
      2. 10.2.2 Detailed Design Procedures
        1. 10.2.2.1 CAN Termination
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DRB|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Thermal Information

THERMAL METRIC(1) TEST CONDITIONS TCAN1042-Q1 UNIT
D (SOIC) DRB (VSON)
8 Pins 8 Pins
RθJA Junction-to-air thermal resistance High-K thermal resistance(2) 105.8 40.2 °C/W
RθJB Junction-to-board thermal resistance(3) 46.8 49.7 °C/W
RθJC(TOP) Junction-to-case (top) thermal resistance(4) 48.3 15.7 °C/W
ΨJT Junction-to-top characterization parameter(5) 8.7 0.6 °C/W
ΨJB Junction-to-board characterization parameter(6) 46.2 15.9 °C/W
TTSD Thermal shutdown temperature 170 170 °C
TTSD_HYS Thermal shutdown hysteresis 5 5 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(4) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(5) The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ΨJB estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).