SBOS884A October   2017  – December 2018 TLV2313-Q1 , TLV313-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     EMIRR IN+ vs Frequency
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions: TLV313-Q1
    2.     Pin Functions: TLV2313-Q1
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: TLV313-Q1
    5. 7.5 Thermal Information: TLV2313-Q1
    6. 7.6 Electrical Characteristics: 5.5 V
    7. 7.7 Electrical Characteristics: 1.8 V
    8. 7.8 Typical Characteristics: Table of Graphs
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Rail-to-Rail Input
      3. 8.3.3 Rail-to-Rail Output
      4. 8.3.4 Common-Mode Rejection Ratio (CMRR)
      5. 8.3.5 Capacitive Load and Stability
      6. 8.3.6 EMI Susceptibility and Input Filtering
      7. 8.3.7 Input and ESD Protection
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example: Single Channel
    3. 11.3 Layout Example: Dual Channel
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2 Detailed Design Procedure

Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:

Equation 1. TLV313-Q1 TLV2313-Q1 app_eq1_sbos754.gif
Equation 2. TLV313-Q1 TLV2313-Q1 app_eq2_sbos754.gif

When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kilohm range is desirable for general-purpose applications because the amplifier circuit uses currents in the milliamp range. This milliamp current range ensures the device does not draw too much current. The trade-off is that very large resistors (100s of kilohms) draw the smallest current but generate the highest noise. Small resistors (100s of ohms) generate low noise but draw high current. This example uses 10 kΩ for RI, meaning 36 kΩ is used for RF. The values are determined by Equation 3:

Equation 3. TLV313-Q1 TLV2313-Q1 app_eq3_sbos754.gif