SBOS820A September   2019  – June 2020 TMCS1100

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Typical Application
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 Reference Voltage Rejection Ratio
      7. 8.1.7 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 External Reference Voltage Input
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

at TA = 25°C, VS = 5 V, VREF = 2.5 V (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
Sensitivity(6) TMCS1100A1 50 mV/A
TMCS1100A2 100 mV/A
TMCS1100A3 200 mV/A
TMCS1100A4 400 mV/A
Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC ±0.2% ±0.7%
Sensitivity error, including lifetime and environmental drift (4) 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC -0.47% ±1.02%
Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +85ºC ±0.4% ±0.85%
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +125ºC ±0.5% ±1.15%
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.05%
VOE Output voltage offset error(1) TMCS1100A1 ±0.4 ±3 mV
TMCS1100A2 ±0.6 ±5 mV
TMCS1100A3 ±0.8 ±8 mV
TMCS1100A4 ±2.2 ±19 mV
Output voltage offset drift TMCS1100A1, TA= –40ºC to +125ºC ±3.7 ±12 µV/℃
TMCS1100A2, TA= –40ºC to +125ºC ±4 ±19 µV/℃
TMCS1100A3, TA= –40ºC to +125ºC ±8.2 ±35 µV/℃
TMCS1100A4, TA= –40ºC to +125ºC ±26 ±138 µV/℃
IOS Offset error, RTI(1)(2) TMCS1100A1 ±8 ±60 mA
TMCS1100A2 ±6 ±50 mA
TMCS1100A3 ±4 ±40 mA
TMCS1100A4 ±5.5 ±47.5 mA
Offset error temperature drift, RTI(2) TMCS1100A1, TA= –40ºC to +125ºC ±74 ±240 µA/°C
TMCS1100A2, TA= –40ºC to +125ºC ±40 ±190 µA/°C
TMCS1100A3, TA= –40ºC to +125ºC ±41 ±175 µA/°C
TMCS1100A4, TA= –40ºC to +125ºC ±65 ±345 µA/°C
PSRR Power-supply rejection ratio TMCS1100A1,A2,A3, VS = 3 V to 5.5 V, VREF = VS/2, TA= –40ºC to +125ºC ±1 ±2 mV/V
TMCS1100A4, VS = 4.5 V to 5.5 V, VREF = VS/2, TA= –40ºC to +125ºC ±1 ±3 mV/V
CMTI Common mode transient immunity 50 kV/µs
CMRR Common mode rejection ratio, RTI(2) DC to 60Hz 5 uA/V
RVRR Reference voltage rejection ratio, output referred VREF = 0.5 V to 4.5 V, TMCS1100A1,A2,A3 1 3.5 mV/V
VREF = 0.5 V to 4.5 V, TMCS1100A4 1.5 8 mV/V
Noise density, RTI(2) TMCS1100A1 380 μA/√Hz
TMCS1100A2 330 μA/√Hz
TMCS1100A3 300 μA/√Hz
TMCS1100A4 225 μA/√Hz
INPUT
RIN Input conductor resistance IN+ to IN– 1.8 mΩ
Input conductor resistance temperature drift TA= –40ºC to +125ºC 4.4 μΩ/°C
G Magnetic coupling factor TA= 25ºC 1.1 mT/A
IIN,max Allowable continuous RMS current (3) TA= 25ºC 30 A
TA= 85ºC 25 A
TA= 105ºC 22.5 A
TA= 125ºC 16 A
VREF Reference input voltage VGND VS V
VREF input current VREF = GND, VS ±1 ±5 µA
VREF external source impedance Maximum source impedance of external circuit driving VREF 5 kΩ
VOLTAGE OUTPUT
ZOUT Closed loop output impedance f = 1 Hz to 1 kHz 0.2
f = 10 kHz 2
Maximum capacitive load No sustained oscillation 1 nF
Short circuit output current VOUT short to ground, short to VS 90 mA
Swing to VS power-supply rail RL = 10 kΩ to GND, TA= –40ºC to +125ºC VS – 0.02 VS – 0.1 V
Swing to GND, current driven RL = 10 kΩ to GND, TA= –40ºC to +125ºC VGND + 5 VGND + 10 mV
Swing to GND, zero current TMCS1100A1,A2,A3, RL = 10 kΩ to GND, TA= –40ºC to +125ºC, VREF = GND, IIN = 0 A VGND + 5 VGND + 20 mV
TMCS1100A4, RL = 10 kΩ to GND, TA= –40ºC to +125ºC, VREF = GND, IIN = 0 A VGND + 20 VGND + 55 mV
FREQUENCY RESPONSE
BW Bandwidth(5) –3-dB Bandwidth 80 kHz
SR Slew rate(5) Slew rate of output amplifier during single transient step. 1.5 V/µs
tr Response time(5) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value, for a 1V output transition. 6.5 µs
tp Propagation delay(5) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value, for a 1V output transition. 4 µs
tr,SC Current overload response time(5) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value. Input current step amplitude is twice full scale output range. 5 µs
tp,SC Current overload propagation delay(5) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value. Input current step amplitude is twice full scale output range. 3 µs
Current overload recovery time Time from end of current causing output saturation condition to valid output 15
µs

POWER SUPPLY
IQ Quiescent current TA = 25ºC 4.5 5.5 mA
TA = –40ºC to +125ºC 6 mA
Power on time Time from VS > 3 V to valid output 25 ms
Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic fields.
RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement Information section.
Thermally limited by junction temperature. Applies when device mounted on TMCS1100EVM. For more details, see the Safe Operating Area section.
Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
Refer to the Transient Response section for details of frequency and transient response of the device.
Centered parameter based on TMCS1100EVM PCB layout. See Layout section. Device must be operated below maximum junction temperature.