SBOS825D September   2019  – July 2021 TMCS1101

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 Internal Reference Voltage
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.9 Electrical Characteristics

at TA = 25°C, VS = 5 V (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
Sensitivity(7) TMCS1101A1B 50 mV/A
TMCS1101A2B 100 mV/A
TMCS1101A3B 200 mV/A
TMCS1101A4B 400 mV/A
TMCS1101A1U 50 mV/A
TMCS1101A2U 100 mV/A
TMCS1101A3U 200 mV/A
TMCS1101A4U 400 mV/A
Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC ±0.3% ±0.8%
TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= 25ºC ±0.3% ±0.8%
Sensitivity error, including lifetime and environmental drift (5) 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC -0.47% ±1.02%
Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +85ºC ±0.5% ±1%
TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= –40ºC to +85ºC ±0.5% ±1%
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +125ºC ±0.6% ±1.25%
TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= –40ºC to +125ºC ±0.6% ±1.25%
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.05%
TMCS1101A1U, VOUT = 0.5 V to 3 V ±0.05%
VOE Output voltage offset error(1) TMCS1101A1B ±1 ±4.5 mV
TMCS1101A2B ±1 ±6 mV
TMCS1101A3B ±1.3 ±9 mV
TMCS1101A4B ±2.4 ±21 mV
TMCS1101A1U ±1.2 ±5 mV
TMCS1101A2U ±1 ±8 mV
TMCS1101A3U ±2.3 ±10 mV
TMCS1101A4U ±12.4 ±28 mV
Output voltage offset drift TMCS1101A1B, TA= –40ºC to +125ºC ±5.4 ±14 µV/℃
TMCS1101A2B, TA= –40ºC to +125ºC ±3.5 ±21 µV/℃
TMCS1101A3B, TA= –40ºC to +125ºC ±7.4 ±37 µV/℃
TMCS1101A4B, TA= –40ºC to +125ºC ±27.6 ±140 µV/℃
TMCS1101A1U, TA= –40ºC to +125ºC ±7 ±16 µV/℃
TMCS1101A2U, TA= –40ºC to +125ºC ±9 ±22 µV/℃
TMCS1101A3U, TA= –40ºC to +125ºC ±14 ±41 µV/℃
TMCS1101A4U, TA= –40ºC to +125ºC ±36 ±144 µV/℃
IOS Offset error, RTI(1) (3) TMCS1101A1B ±20 ±90 mA
TMCS1101A2B ±10 ±60 mA
TMCS1101A3B ±6.5 ±45 mA
TMCS1101A4B ±6 ±52.5 mA
TMCS1101A1U ±24 ±100 mA
TMCS1101A2U ±10 ±80 mA
TMCS1101A3U ±11.5 ±50 mA
TMCS1101A4U ±31 ±70 mA
Offset error temperature drift, RTI(3) TMCS1101A1B, TA= –40ºC to +125ºC ±108 ±280 µA/°C
TMCS1101A2B, TA= –40ºC to +125ºC ±35 ±210 µA/°C
TMCS1101A3B, TA= –40ºC to +125ºC ±37 ±185 µA/°C
TMCS1101A4B, TA= –40ºC to +125ºC ±69 ±350 µA/°C
TMCS1101A1U, TA= –40ºC to +125ºC ±140 ±320 µA/°C
TMCS1101A2U, TA= –40ºC to +125ºC ±90 ±220 µA/°C
TMCS1101A3U, TA= –40ºC to +125ºC ±70 ±205 µA/°C
TMCS1101A4U, TA= –40ºC to +125ºC ±90 ±360 µA/°C
PSRR Power-supply rejection ratio VS = 3 V to 5.5 V, TMCS1101A1B/U-A3B/U, TA= –40ºC to +125ºC ±1 ±3 mV/V
VS = 4.5 V to 5.5 V, TMCS1101A4B/U, TA= –40ºC to +125ºC ±1 ±6.5 mV/V
CMTI Common mode transient immunity 50 kV/µs
CMRR Common mode rejection ratio, RTI(3) DC to 60Hz 5 uA/V
Zero current VOUT (1) TMCS1101A<1-4>U 0.1*VS V/V
Zero current VOUT (1) TMCS1101A<1-4>B 0.5*VS V/V
Noise density, RTI(3) TMCS1101A1B 380 μA/√Hz
TMCS1101A2B 330 μA/√Hz
TMCS1101A3B 300 μA/√Hz
TMCS1101A4B 225 μA/√Hz
TMCS1101A1U 380 μA/√Hz
TMCS1101A2U 330 μA/√Hz
TMCS1101A3U 300 μA/√Hz
TMCS1101A4U 225 μA/√Hz
INPUT
RIN Input conductor resistance IN+ to IN– 1.8 mΩ
Input conductor resistance temperature drift TA= –40ºC to +125ºC 4.4 μΩ/°C
G Magnetic coupling factor TA= 25ºC 1.1 mT/A
IIN,max Allowable continuous RMS current (4) TA= 25ºC 30 A
TA= 85ºC 25 A
TA= 105ºC 22.5 A
TA= 125ºC 16 A
NC (Pin 6) input impedance Over allowable range, GND < VNC < VS 1 MΩ
VOLTAGE OUTPUT
ZOUT Closed loop output impedance f = 1 Hz to 1 kHz 0.2 Ω
f = 10 kHz 2 Ω
Maximum capacitive load No sustained oscillation 1 nF
Short circuit output current VOUT short to ground, short to VS 90 mA
Swing to VS power-supply rail RL = 10 kΩ to GND, TA= –40ºC to +125ºC VS – 0.02 VS – 0.1 V
Swing to GND RL = 10 kΩ to GND, TA= –40ºC to +125ºC VGND + 5 VGND + 10 mV
FREQUENCY RESPONSE
BW Bandwidth(6) –3-dB Bandwidth 80 kHz
SR Slew rate(6) Slew rate of output amplifier during single transient step. 1.5 V/µs
tr Response time(6) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value, for a 1V output transition. 6.5 µs
tp Propagation delay(6) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value, for a 1V output transition. 4 µs
tr,SC Current overload response time(6) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value. Input current step amplitude is twice full scale output range. 5 µs
tp,SC Current overload propagation delay(6) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value. Input current step amplitude is twice full scale output range. 3 µs
Current overload recovery time Time from end of current causing output saturation condition to valid output 15
µs
POWER SUPPLY
IQ Quiescent current TA = 25ºC 4.5 5.5 mA
TA = –40ºC to +125ºC 6 mA
Power on time Time from VS > 3 V to valid output 25 ms
(1) Excludes effect of external magnetic fields. See the  Accuracy Parameters section for details to calculate error due to external magnetic fields.
(3) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the  Parameter Measurement Information  section.
(4) Thermally limited by junction temperature. Applies when device mounted on TMCS1101EVM . For more details, see the Safe Operating Area section.
(5) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See  Lifetime and Environmental Stability section for more details.
(6) Refer to the  Transient Response section for details of frequency and transient response of the device.
(7) Centered parameter based on  TMCS1101EVM PCB layout. See  Layout section. Device must be operated below maximum junction temperature.