SBOS825D September   2019  – July 2021 TMCS1101

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 Internal Reference Voltage
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.6 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air 4 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface 4 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) 60 µm
CTI Comparative tracking index DIN EN 60112; IEC 60112 >400 V
Material group II
Overvoltage category Rated mains voltage ≤ 150 VRMS I-IV
Rated mains voltage ≤ 300 VRMS I-III
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 600 VPK
VIOWM Maximum working isolation voltage AC voltage (sine wave); Time Dependent Dielectric Breakdown test, see Insulation Lifetime. 424 VRMS
DC voltage 600 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM = 4242VPK, t = 60 s (qualification);
VTEST = 1.2 × VIOTM = 5090VPK, t = 1 s (100% production)		 4242 VPK
VIOSM Maximum surge isolation voltage(2) Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.3 × VIOSM = 7800VPK (qualification)		 6000 VPK
qpd Apparent charge(3) Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM = 4242VPK, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s		 ≤5 pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM = 4242VPK, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s		 ≤5
Method b3: At routine test (100% production) and preconditioning (type test)
Vini = 1.2 × VIOTM = 5090VPK, tini = 1 s;
Vpd(m) = 1.2 × VIOTM = 5090VPK, tm = 1 s		 ≤5
CIO Barrier capacitance, input to output(4) VIO = 0.4 sin (2πft), f = 1 MHz 0.6 pF
RIO Isolation resistance, input to output(4) VIO = 500 V, TA = 25°C >1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011 Ω
VIO = 500 V at TS = 150°C >109 Ω
Pollution degree 2
UL 1577
VISO Withstand isolation voltage VTEST = VISO, t = 60 s (qualification); VTEST = 1.2 × VISO,
t = 1 s (100% production)		 3000 VRMS
(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care to maintain the creepage and clearance distance of the board design to make sure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
(2) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(3) Apparent charge is electrical discharge caused by a partial discharge (pd).
(4) All pins on each side of the barrier tied together creating a two-terminal device