SBOSAH3 April   2025 TMCS1148

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Power Ratings
    6. 6.6 Insulation Specifications
    7. 6.7 Safety Limiting Values
    8. 6.8 Electrical Characteristics
  8. 7 Typical Characteristics
    1. 7.1 Insulation Characteristics Curves
  9. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Ambient Field Rejection
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
      4. 9.3.4 Internal Reference Voltage
      5. 9.3.5 Current-Sensing Measurable Ranges
      6. 9.3.6 Overcurrent Detection
        1. 9.3.6.1 Setting The User Configurable Overcurrent Threshold
          1. 9.3.6.1.1 Setting Overcurrent Threshold Using Power Supply Voltage
          2. 9.3.6.1.2 Setting Overcurrent Threshold Using Internal Reference Voltage
          3. 9.3.6.1.3 Setting Overcurrent Threshold Example
        2. 9.3.6.2 Overcurrent Output Response
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room-Temperature Error Calculations
        2. 10.1.1.2 Full-Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Device Support
      1. 11.2.1 Development Support
    3. 11.3 Documentation Support
      1. 11.3.1 Related Documentation
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Mechanical Data
    2.     PACKAGING INFORMATION
    3. 13.2 Tape and Reel Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DVF|10
Thermal pad, mechanical data (Package|Pins)

6.8 Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1148Axx and TMCS1148Exx, VS = 3.3V on TMCS1148Bxx (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.27 mΩ
RIN Input conductor resistance temperature drift TA= –40ºC to 125ºC 0.95 μΩ/°C
IIN,MAX Maximum Continuous Input Current(1) TA= 25ºC 125 ARMS
TA= 125ºC 92 ARMS
OUTPUT
S Sensitivity TMCS1148x1A 9.9 mV/A
TMCS1148x2A 14.8
TMCS1148x3A 19.8
TMCS1148x4A 20
TMCS1148x5A 30
TMCS1148x6A 33
TMCS1148x7A 40
TMCS1148x8A 60
TMCS1148x9A 100
eS Sensitivity Error 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
Sdrift,therm Sensitivity Thermal Drift 0.05V ≤ VOUT ≤ VS − 0.2V, TA = −40°C to 125°C ±20 ±50 ppm/°C
Sdrift, life Sensitivity Lifetime Drift(2) 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
eNL Nonlinearity Error VOUT = 0.1V to VS – 0.1V ±0.1 %
VOUT,0A Zero Current Output Voltage TMCS1148AxA, IIN = 0A 2.5 V
TMCS1148BxA, IIN = 0A 1.65
TMCS1148ExA, IIN = 0A 0.5
VOE Output Voltage Offset Error(3) TMCS1148x1A, VOUT,0A – VREF, IIN = 0A ±0.2 ±1 mV
TMCS1148x2A, VOUT,0A – VREF, IIN = 0A ±0.2 ±1
TMCS1148x3A, VOUT,0A – VREF, IIN = 0A ±0.2 ±1
TMCS1148x4A, VOUT,0A – VREF, IIN = 0A ±0.2 ±1
TMCS1148x5A, VOUT,0A – VREF, IIN = 0A ±0.3 ±1.5
TMCS1148x6A, VOUT,0A – VREF, IIN = 0A ±0.3 ±1.5
TMCS1148x7A, VOUT,0A – VREF, IIN = 0A ±0.4 ±2
TMCS1148x8A, VOUT,0A – VREF, IIN = 0A ±0.5 ±2.5
TMCS1148x9A, VOUT,0A – VREF, IIN = 0A ±0.6 ±3
VOE, drift, therm Output Voltage Offset Thermal Drift TMCS1148x1A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±4 ±10 µV/°C
TMCS1148x2A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±4 ±10
TMCS1148x3A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±4 ±10
TMCS1148x4A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±4 ±10
TMCS1148x5A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±5 ±15
TMCS1148x6A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±5 ±15
TMCS1148x7A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±10 ±30
TMCS1148x8A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±15 ±35
TMCS1148x9A, VOUT,0A – VREF, IIN = 0A, TA = –40°C to 125°C ±20 ±40
IOS, drift, life Offset Lifetime Drift(2) Input Referred, (VOUT,0A – VREF) / S, IIN = 0A  ±12 ±25 mA
PSRR Power Supply Rejection Ratio Input Referred, VS = 3V to 5.5V, TA= –40ºC to 125ºC ±15 ±75 mA/V
CMTI Common Mode Transient Immunity(4) VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input Referred, DC to 60Hz 10 µA/V
CMFR Common Mode Field Rejection External Field, DC to 1kHz 14 mA/mT
Input Noise Density Input Referred, Full Bandwidth 215 μA/√Hz
CL,MAX Maximum capacitive load VOUT to GND 4.7 nF
Short circuit output current VOUT short to GND, short to VS 50 mA
SwingVS Swing to VS power supply rail RL = 10kΩ to GND, TA= –40ºC to 125ºC VS – 0.02 VS – 0.05 V
SwingGND Swing to GND 5 10 mV
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 550 kHz
SR Slew Rate(5) Output rate of change between reaching 10% and 90% of final value, 100ns input step 6 V/µs
tr Response Time(5) Time between the input and output reaching 90% of final values, 100ns input step, 1V output transition 250 ns
tpd Propagation Delay(5) Time between the input and output reaching 10% of final values, 100ns input step, 1V output transition 60 ns
Current Overload Recovery Time 300 ns
INTEGRATED REFERENCE
VREF Reference Output Voltage TMCS1148AxA 2.496 2.5 2.504 V
TMCS1148BxA 1.647 1.65 1.653
TMCS1148ExA 0.499 0.5 0.501
Reference Output Thermal Drift TMCS1148AxA, TA = –40°C to 125°C ±20 ±50 µV/°C
TMCS1148BxA, TA = –40°C to 125°C ±13 ±33
TMCS1148ExA, TA = –40°C to 125°C ±4 ±10
Reference Output Lifetime Drift TMCS1148AxA ±1.3 ±2.5 mV
TMCS1148BxA ±0.9 ±1.7
TMCS1148ExA ±0.4 ±0.8
Reference Output Voltage PSRR VS = 3V to 5.5V 80 150 µV/V
Maximum Reference Output Capacitive Load 20 nF
Reference Output Voltage Load Regulation VREF load = -5mA, 0mA, 5mA 0.2 mV/mA
OVER CURRENT DETECTION
VOC Over Current Detection Threshold Voltage VOC = S x IOC / 2.5 0.3 VS V
ROC Over Current Threshold Input Impedance 120 kΩ
Over Current Hysteresis TMCS1148x1A 7.5 A
TMCS1148x2A 7.5
TMCS1148x3A 5
TMCS1148x4A 5
TMCS1148x5A 5
TMCS1148x6A 5
TMCS1148x7A 5
TMCS1148x8A 3.5
TMCS1148x9A 3.5
Over Current Threshold Error TA = –40°C to 125°C ±7 ±15 %
Over Current Detection Response Time IIN step = 120% of IOC 100 250 ns
OC,OL OC Pin Pull-down Voltage IOL = 3mA, TA = –40°C to 125℃ GND 0.07 0.2 V
POWER SUPPLY
VS Supply voltage TA = –40ºC to 125ºC 3.0 5.5 V
IQ Quiescent current TA = 25ºC 11 14 mA
TA = –40ºC to 125ºC 14.5 mA
Power on time Time from VS > 3V to valid output 34 ms
(1) Thermally limited by junction temperature, see Absolute Maximum Ratings. Applies when device mounted on TMCS1148xEVM. For more details, see the Safe Operating Area section.
(2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean +1σ from worst case stress test condition. Maximum values are tested device population mean ±6σ. Devices tested in AEC-Q100 qualification stayed within maximum limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
(3) Excludes effect of external magnetic fields. See the External Magnetic Field Errors and Total Error Calculation Examples sections for details to calculate error due to uniform external magnetic fields.
(4) Refer to the Common-Mode Transient Immunity section for details on common-mode transient response.
(5) Refer to the Transient Response Parameters section for details on transient response of the device.