SBOSA45C february   2022  – may 2023 TMP1826

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Revision History
  6. Description (cont.)
  7. Device Comparison
  8. Pin Configuration and Functions
  9. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 1-Wire Interface Timing
    7. 8.7 EEPROM Characteristics
    8. 8.8 Timing Diagrams
    9. 8.9 Typical Characteristics
  10. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power Up
      2. 9.3.2  Power Mode Switch
      3. 9.3.3  Bus Pullup Resistor
      4. 9.3.4  Temperature Results
      5. 9.3.5  Temperature Offset
      6. 9.3.6  Temperature Alert
      7. 9.3.7  Standard Device Address
        1. 9.3.7.1 Unique 64-Bit Device Address and ID
      8. 9.3.8  Flexible Device Address
        1. 9.3.8.1 Non-Volatile Short Address
        2. 9.3.8.2 IO Hardware Address
        3. 9.3.8.3 Resistor Address
        4. 9.3.8.4 Combined IO and Resistor Address
      9. 9.3.9  CRC Generation
      10. 9.3.10 Functional Register Map
      11. 9.3.11 User Memory Map
      12. 9.3.12 Bit Communication
        1. 9.3.12.1 Host Write, Device Read
        2. 9.3.12.2 Host Read, Device Write
      13. 9.3.13 Bus Speed
      14. 9.3.14 NIST Traceability
    4. 9.4 Device Functional Modes
      1. 9.4.1 Conversion Modes
        1. 9.4.1.1 Basic One-Shot Conversion Mode
        2. 9.4.1.2 Auto Conversion Mode
        3. 9.4.1.3 Stacked Conversion Mode
        4. 9.4.1.4 Continuous Conversion Mode
      2. 9.4.2 Alert Function
        1. 9.4.2.1 Alert Mode
        2. 9.4.2.2 Comparator Mode
      3. 9.4.3 1-Wire Interface Communication
        1. 9.4.3.1 Bus Reset Phase
        2. 9.4.3.2 Address Phase
          1. 9.4.3.2.1 READADDR (33h)
          2. 9.4.3.2.2 MATCHADDR (55h)
          3. 9.4.3.2.3 SEARCHADDR (F0h)
          4. 9.4.3.2.4 ALERTSEARCH (ECh)
          5. 9.4.3.2.5 SKIPADDR (CCh)
          6. 9.4.3.2.6 OVD SKIPADDR (3Ch)
          7. 9.4.3.2.7 OVD MATCHADDR (69h)
          8. 9.4.3.2.8 FLEXADDR (0Fh)
        3. 9.4.3.3 Function Phase
          1. 9.4.3.3.1  CONVERTTEMP (44h)
          2. 9.4.3.3.2  WRITE SCRATCHPAD-1 (4Eh)
          3. 9.4.3.3.3  READ SCRATCHPAD-1 (BEh)
          4. 9.4.3.3.4  COPY SCRATCHPAD-1 (48h)
          5. 9.4.3.3.5  WRITE SCRATCHPAD-2 (0Fh)
          6. 9.4.3.3.6  READ SCRATCHPAD-2 (AAh)
          7. 9.4.3.3.7  COPY SCRATCHPAD-2 (55h)
          8. 9.4.3.3.8  READ EEPROM (F0h)
          9. 9.4.3.3.9  GPIO WRITE (A5h)
          10. 9.4.3.3.10 GPIO READ (F5h)
      4. 9.4.4 NVM Operations
        1. 9.4.4.1 Programming User Data
        2. 9.4.4.2 Register and Memory Protection
          1. 9.4.4.2.1 Scratchpad-1 Register Protection
          2. 9.4.4.2.2 User Memory Protection
    5. 9.5 Programming
      1. 9.5.1 Single Device Temperature Conversion and Read
      2. 9.5.2 Multiple Device Temperature Conversion and Read
      3. 9.5.3 Register Scratchpad-1 Update and Commit
      4. 9.5.4 Single Device EEPROM Programming and Verify
      5. 9.5.5 Single Device EEPROM Page Lock Operation
      6. 9.5.6 Multiple Device IO Read
      7. 9.5.7 Multiple Device IO Write
    6. 9.6 Register Map
      1. 9.6.1  Temperature Result LSB Register (Scratchpad-1 offset = 00h) [reset = 00h]
      2. 9.6.2  Temperature Result MSB Register (Scratchpad-1 offset = 01h) [reset = 00h]
      3. 9.6.3  Status Register (Scratchpad-1 offset = 02h) [reset = 3Ch]
      4. 9.6.4  Device Configuration-1 Register (Scratchpad-1 offset = 04h) [reset = 70h]
      5. 9.6.5  Device Configuration-2 Register (Scratchpad-1 offset = 05h) [reset = 80h]
      6. 9.6.6  Short Address Register (Scratchpad-1 offset = 06h) [reset = 00h]
      7. 9.6.7  Temperature Alert Low LSB Register (Scratchpad-1 offset = 08h) [reset = 00h]
      8. 9.6.8  Temperature Alert Low MSB Register (Scratchpad-1 offset = 09h) [reset = 00h]
      9. 9.6.9  Temperature Alert High LSB Register (Scratchpad-1 offset = 0Ah) [reset = F0h]
      10. 9.6.10 Temperature Alert High MSB Register (Scratchpad-1 offset = 0Bh) [reset = 07h]
      11. 9.6.11 Temperature Offset LSB Register (Scratchpad-1 offset = 0Ch) [reset = 00h]
      12. 9.6.12 Temperature Offset MSB Register (Scratchpad-1 offset = 0Dh) [reset = 00h]
      13. 9.6.13 IO Read Register [reset = F0h]
      14. 9.6.14 IO Configuration Register [reset = 00h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Bus Powered Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
      2. 10.2.2 Supply Powered Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
      3. 10.2.3 UART Interface for Communication
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Revision History

Changes from Revision B (December 2022) to Revision C (May 2023)

  • Removed preview note from WSON package optionGo
  • Added device comparison tableGo
  • Changed maximum operating temperature range for standard speed mode in footnote 2Go
  • Changed NGR package maximum accuracy for +10°C to +45°C from ±0.3°C to ±0.2°C and full range from ±1.0°C to ±0.4°CGo
  • Changed VIL of IO from 0.2×VS to 0.3×VS Go
  • Changed VIH of IO from 0.8×VS to 0.7×VS Go
  • Added standby current specification for continuous conversion modeGo
  • Changed tSLOT minimum in standard mode from 60 µs to tWR0L + tRC Go
  • Removed tSLOT maximum in standard modeGo
  • Changed tSLOT minimum in overdrive mode from 11 µs to tWR0L + tRC Go
  • Changed tREC in overdrive speed from 10 µs to 2 µsGo
  • Changed tRL minimum from 2 µs to 2.5 µsGo
  • Changed tREADIDLE from 400 µs to 560 µsGo
  • Changed IDD_PROG from 214 µA to 230 µAGo
  • Added continuous conversion mode for VDD powered modeGo

Changes from Revision A (September 2022) to Revision B (December 2022)

  • Changed the DGK (VSSOP) package status from Advanced Information to Production DataGo
  • Added Functional Safety information to the Features sectionGo
  • Changed DGK package maximum accuracy for full range from ±1.0°C to ±0.5°CGo
  • Changed tREC in overdrive speed from 2 µs to 10 µsGo
  • Added minimum EEPROM Endurance specification for 125 °CGo
  • Removed GPIO read and CRC byte from the GPIO WRITE sectionGo

Changes from Revision * (February 2022) to Revision A (September 2022)

  • Added WSON package optionGo
  • Added pinout for WSON packageGo
  • Updated operating ambient temperature as –55°C to 150 °CGo
  • Added long-term stability and drift specificationGo
  • Added temperature cycling and hysteresis specificationGo
  • Added response time specificationGo
  • Changed standby current as 1.6 µAGo
  • Changed power-on reset threshold on rising supply from typical 1.25 V to minimum of 1.5 VGo
  • Changed power-on reset threshold on falling supply from typical 1.15 V to maximum of 1.3 VGo
  • Added typical Endurance spec for EEPROMGo
  • Added the Flexible Device Address sectionGo
  • Added section on standard and overdrive bus speedsGo
  • Added FLEXADDR address commandGo
  • Added description of FLEXADDR address commandGo
  • Updated reset value for TEMP_RESULT_L and TEMP_RESULT_H registersGo
  • Added DATA_READY flag in STATUS_REGGo
  • Added FLEX_ADDR_MODE bits in CONFIG_REG2 registerGo
  • Updated STACKMODE_ADDR as SHORT_ADDR registerGo