SBOSA45C february   2022  – may 2023 TMP1826

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (cont.)
  7. 6 Device Comparison
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 1-Wire Interface Timing
    7. 8.7 EEPROM Characteristics
    8. 8.8 Timing Diagrams
    9. 8.9 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power Up
      2. 9.3.2  Power Mode Switch
      3. 9.3.3  Bus Pullup Resistor
      4. 9.3.4  Temperature Results
      5. 9.3.5  Temperature Offset
      6. 9.3.6  Temperature Alert
      7. 9.3.7  Standard Device Address
        1. 9.3.7.1 Unique 64-Bit Device Address and ID
      8. 9.3.8  Flexible Device Address
        1. 9.3.8.1 Non-Volatile Short Address
        2. 9.3.8.2 IO Hardware Address
        3. 9.3.8.3 Resistor Address
        4. 9.3.8.4 Combined IO and Resistor Address
      9. 9.3.9  CRC Generation
      10. 9.3.10 Functional Register Map
      11. 9.3.11 User Memory Map
      12. 9.3.12 Bit Communication
        1. 9.3.12.1 Host Write, Device Read
        2. 9.3.12.2 Host Read, Device Write
      13. 9.3.13 Bus Speed
      14. 9.3.14 NIST Traceability
    4. 9.4 Device Functional Modes
      1. 9.4.1 Conversion Modes
        1. 9.4.1.1 Basic One-Shot Conversion Mode
        2. 9.4.1.2 Auto Conversion Mode
        3. 9.4.1.3 Stacked Conversion Mode
        4. 9.4.1.4 Continuous Conversion Mode
      2. 9.4.2 Alert Function
        1. 9.4.2.1 Alert Mode
        2. 9.4.2.2 Comparator Mode
      3. 9.4.3 1-Wire Interface Communication
        1. 9.4.3.1 Bus Reset Phase
        2. 9.4.3.2 Address Phase
          1. 9.4.3.2.1 READADDR (33h)
          2. 9.4.3.2.2 MATCHADDR (55h)
          3. 9.4.3.2.3 SEARCHADDR (F0h)
          4. 9.4.3.2.4 ALERTSEARCH (ECh)
          5. 9.4.3.2.5 SKIPADDR (CCh)
          6. 9.4.3.2.6 OVD SKIPADDR (3Ch)
          7. 9.4.3.2.7 OVD MATCHADDR (69h)
          8. 9.4.3.2.8 FLEXADDR (0Fh)
        3. 9.4.3.3 Function Phase
          1. 9.4.3.3.1  CONVERTTEMP (44h)
          2. 9.4.3.3.2  WRITE SCRATCHPAD-1 (4Eh)
          3. 9.4.3.3.3  READ SCRATCHPAD-1 (BEh)
          4. 9.4.3.3.4  COPY SCRATCHPAD-1 (48h)
          5. 9.4.3.3.5  WRITE SCRATCHPAD-2 (0Fh)
          6. 9.4.3.3.6  READ SCRATCHPAD-2 (AAh)
          7. 9.4.3.3.7  COPY SCRATCHPAD-2 (55h)
          8. 9.4.3.3.8  READ EEPROM (F0h)
          9. 9.4.3.3.9  GPIO WRITE (A5h)
          10. 9.4.3.3.10 GPIO READ (F5h)
      4. 9.4.4 NVM Operations
        1. 9.4.4.1 Programming User Data
        2. 9.4.4.2 Register and Memory Protection
          1. 9.4.4.2.1 Scratchpad-1 Register Protection
          2. 9.4.4.2.2 User Memory Protection
    5. 9.5 Programming
      1. 9.5.1 Single Device Temperature Conversion and Read
      2. 9.5.2 Multiple Device Temperature Conversion and Read
      3. 9.5.3 Register Scratchpad-1 Update and Commit
      4. 9.5.4 Single Device EEPROM Programming and Verify
      5. 9.5.5 Single Device EEPROM Page Lock Operation
      6. 9.5.6 Multiple Device IO Read
      7. 9.5.7 Multiple Device IO Write
    6. 9.6 Register Map
      1. 9.6.1  Temperature Result LSB Register (Scratchpad-1 offset = 00h) [reset = 00h]
      2. 9.6.2  Temperature Result MSB Register (Scratchpad-1 offset = 01h) [reset = 00h]
      3. 9.6.3  Status Register (Scratchpad-1 offset = 02h) [reset = 3Ch]
      4. 9.6.4  Device Configuration-1 Register (Scratchpad-1 offset = 04h) [reset = 70h]
      5. 9.6.5  Device Configuration-2 Register (Scratchpad-1 offset = 05h) [reset = 80h]
      6. 9.6.6  Short Address Register (Scratchpad-1 offset = 06h) [reset = 00h]
      7. 9.6.7  Temperature Alert Low LSB Register (Scratchpad-1 offset = 08h) [reset = 00h]
      8. 9.6.8  Temperature Alert Low MSB Register (Scratchpad-1 offset = 09h) [reset = 00h]
      9. 9.6.9  Temperature Alert High LSB Register (Scratchpad-1 offset = 0Ah) [reset = F0h]
      10. 9.6.10 Temperature Alert High MSB Register (Scratchpad-1 offset = 0Bh) [reset = 07h]
      11. 9.6.11 Temperature Offset LSB Register (Scratchpad-1 offset = 0Ch) [reset = 00h]
      12. 9.6.12 Temperature Offset MSB Register (Scratchpad-1 offset = 0Dh) [reset = 00h]
      13. 9.6.13 IO Read Register [reset = F0h]
      14. 9.6.14 IO Configuration Register [reset = 00h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Bus Powered Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
      2. 10.2.2 Supply Powered Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
      3. 10.2.3 UART Interface for Communication
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Electrical Characteristics

Over free-air temperature range and VDD = 1.7 V to 5.5 V (unless otherwise noted); Typical specifications are at TA = 25°C and VDD = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE SENSOR
TERR Temperature accuracy (NGR) 10°C to 45°C ±0.1 ±0.2
–40°C to 105°C ±0.3
–55°C to 150°C ±0.4
Temperature accuracy (DGK) –20°C to 85°C ±0.1 ±0.3 °C
–55°C to 150°C ±0.5
PSR DC power supply sensitivity ±0.03 °C/V
TRES Temperature resolution (High Precision Format) Including sign bit 16 Bits
LSB 7.8125 m°C
TREPEAT Repeatability(1) Averaging enabled, Conversion Time = 5.5 ms, 16-bit mode,
1-Hz conversion rate, 300 acquisition		 ±2 LSB
TLTD Long-term stability and drift 1000 hours at 150°C(2) 0.0625 °C
THYST Temperature cycling and hysteresis TSTART = –40°C
TFINISH = 150°C
TTEST = 25°C
3 cycles		 4 LSB
tRESP_L Response time (Stirred Liquid)
NGR Package		 Single layer Flex PCB τ = 63 %
25°C to 75°C		 0.77 s
2-layer 62-mil Rigid PCB 1.91 s
tACT Active Conversion time (No Averaging) CONV_TIME_SEL = 0 (Figure 9-12) 2.54 3 3.37 ms
CONV_TIME_SEL = 1 4.69 5.5 6.12 ms
tDELAY Start-up delay for temperature conversion 100 300 µs
SDQ DIGITAL INPUT/OUTPUT
CIN SDQ pin capacitance 40 pF
VIL Input logic low level(3) –0.3 0.2 × VS V
VIH Input logic high level(3) 0.8 × VS VS + 0.3 V
VHYST Hysteresis 0.3 V
VOL Output low level IOL = –4 mA 0.4 V
IO CHARACTERISTICS
CIN Input capacitance 10 pF
VIL Input logic low level(3) –0.3 0.3 × VS V
VIH Input logic high level(3) 0.7 × VS VS + 0.3 V
IIN Input leakage current 0 ±0.12 µA
VOL Output low level IOL = –3 mA 0.4 V
RESISTOR ADDRESS DECODER CHARACTERISTICS
CLOAD Load capacitance as seen on ADDR pin (includes PCB parasitics) 100 pF
RADDR resistor range 6.49 54.9 kΩ
RADDR resistor tolerance TA = 25°C –1.0 1.0 %
RADDR resistor temperature coefficient –100 100 ppm/°C
RADDR resistor lifetime drift –0.2 0.2 %
tRESDET Resistor decoding time 2.8 ms
POWER SUPPLY
IPU Pullup current(5) Bus powered mode, serial bus idle 300
μA
IDD_ACTIVE Supply current during temperature conversion Temperature Conversion, serial bus idle 94 154 μA
IDD_SB Standby current(4) VDD powered, serial bus inactive, continuous conversion mode TA = -55°C to 85°C 1.6 4.2 μA
TA = -55°C to 150°C 24
IDD_SD Shutdown current Serial bus inactive, one shot conversion mode TA = -55°C to 85°C 1.3 3.3 μA
TA = -55°C to 150°C 23.2
VPOR Power-on reset threshold voltage Supply rising (Figure 8-4, Figure 8-5) 1.5 V
Brownout detect Supply falling 1.3 V
tINIT POR Initialization Time Time required by device to reset after power up (Figure 8-4, Figure 8-5) 2.0 ms
(1) Repeatability is the ability to reproduce a reading when the measured temperature is applied consecutively, under the same conditions. See Figure 8-12
(2) Long term stability is determined using accelerated operational life testing at a junction temperature of 150°C.
(3) In bus powered mode VS = VPUR. In supply powered mode VS = VDD.
(4) Quiescent current between conversions.
(5) The pullup current parameter is required to size the bus pullup resistor (See Section 9.3.3) for active temperature conversion or EEPROM read and program operations.