SCDS412A June   2019  – August 2019 TMUX1133 , TMUX1134

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      TMUX113x Block Diagrams
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions TMUX1133
    2.     Pin Functions TMUX1134
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics (VDD = 5 V ±10 %)
    6. 7.6  Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 7.7  Electrical Characteristics (VDD = 2.5 V ±10 %), (VSS = –2.5 V ±10 %)
    8. 7.8  Electrical Characteristics (VDD = 1.8 V ±10 %)
    9. 7.9  Electrical Characteristics (VDD = 1.2 V ±10 %)
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Transition Time
    5. 8.5  Break-Before-Make
    6. 8.6  tON(EN) and tOFF(EN)
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail to Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Fail-Safe Logic
      5. 9.3.5 Ultra-low Leakage Current
      6. 9.3.6 Ultra-low Charge Injection
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
    3. 10.3 Design Requirements
    4. 10.4 Detailed Design Procedure
    5. 10.5 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Layout Information
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.7 Charge Injection

The TMUX1133 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 22 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX1133 TMUX1134 Charge_Injection.gifFigure 22. Charge-Injection Measurement Setup