SLVS992D September 2009 – April 2019 TPS61093
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VIN | Input voltage range, VIN | 1.6 | 6 | V | ||
IQ | Operating quiescent current into VIN | Device PWM switching no load | 0.9 | 1.5 | mA | |
ISD | Shutdown current | EN = GND, VIN = 6 V | 1 | μA | ||
UVLO | Undervoltage lockout threshold | VIN falling | 1.5 | 1.55 | V | |
Vhys | Undervoltage lockout hysterisis | 50 | mV | |||
ENABLE AND PWM CONTROL | ||||||
VENH | EN logic high voltage | VIN = 1.6 V to 6 V | 1.2 | V | ||
VENL | EN logic low voltage | VIN = 1.6 V to 6 V | 0.3 | V | ||
REN | EN pull down resistor | 400 | 800 | 1600 | kΩ | |
Toff | EN pulse width to shutdown | EN high to low | 1 | ms | ||
VOLTAGE CONTROL | ||||||
VREF | Voltage feedback regulation voltage | 0.49 | 0.5 | 0.51 | V | |
IFB | Voltage feedback input bias current | 100 | nA | |||
fS | Oscillator frequency | 1.0 | 1.2 | 1.4 | MHz | |
Dmax | Maximum duty cycle | VFB = 0.1 V, TA = 85°C | 90% | 93% | ||
Tmin_on | Minimum on pulse width | 65 | ns | |||
POWER SWITCH, ISOLATION FET | ||||||
RDS(ON)N | N-channel MOSFET on-resistance | VIN = 3 V | 0.25 | 0.4 | Ω | |
RDS(ON)iso | Isolation FET on-resistance | VO = 5 V | 2.5 | 4 | Ω | |
VO = 3.5 V | 4.5 | |||||
ILN_N | N-channel leakage current | VDS = 20 V, TA = 25°C | 1 | μA | ||
ILN_iso | Isolation FET leakage current | VDS = 20 V, TA = 25°C | 1 | μA | ||
VF | Power diode forward voltage | Current = 500 mA | 0.8 | V | ||
OC, ILIM, OVP SC AND SS | ||||||
ILIM | N-Channel MOSFET current limit | 0.9 | 1.1 | 1.5 | A | |
Vovp | Overvoltage protection threshold | Measured on the VO pin | 18 | 19 | V | |
Vovp_hys | Overvoltage protection hysteresis | 0.6 | V | |||
IOL | Overload protection | 200 | 300 | mA | ||
THERMAL SHUTDOWN | ||||||
Tshutdown | Thermal shutdown threshold | 150 | °C | |||
Thysteresis | Thermal shutdown hysteresis | 15 | °C |