SLVSAC5 April 2014 TPS62684
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VI | Voltage at VIN(2) | –0.3 | 6 | V |
| Voltage at FB(2) | –0.3 | 3.6 | ||
| Voltage at SW, EN, AVIN (2) | –0.3 | VIN + 0.3 | ||
| Continuous average output current(4) | 890 | mA | ||
| Peak output current(4) | 1600 | mA | ||
| TJ | Operating junction temperature(3) | -40 | 150 | °C |
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Tstg | Storage temperature range | –65 | 150 | °C |
| ESD rating (1) | Human body model | 2 | kV | |
| Charge device model | 1 | |||
| Machine model | 100 | V |
| MIN | NOM | MAX | UNIT | ||||
|---|---|---|---|---|---|---|---|
| VIN | Input voltage range | 3.25 | 5.5 | V | |||
| IO | Peak output current(1) | VIN < VOUT,nom + 1V | 0 | 960 | mA | ||
| VOUT,nom + 1V ≤ VIN ≤ 5.5V | 0 | 1600 | |||||
| CI | Effective Input Capacitance(2)(3) | 0.5 | µF | ||||
| L | Effective Inductance | 0.3 | 1.2 | µH | |||
| CO | Effective Output Capacitance(2) | 3.0 | 5.0 | 30 | µF | ||
| TA | Ambient temperature(4) | –40 | +85 | °C | |||
| TJ | Operating junction temperature(5) | –40 | +125 | °C | |||
| THERMAL METRIC(1) | TPS62684 | UNIT | |
|---|---|---|---|
| YFF | |||
| 6 TERMINALS | |||
| RθJA | Junction-to-ambient thermal resistance | 108.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 1.0 | |
| RθJB | Junction-to-board thermal resistance | 17.5 | |
| ψJT | Junction-to-top characterization parameter | 4.1 | |
| ψJB | Junction-to-board characterization parameter | 17.5 | |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|---|---|
| SUPPLY CURRENT into VIN + AVIN | ||||||||
| IQ | Operating quiescent current | IO = 0mA | 5.8 | mA | ||||
| ISD | Shutdown current | EN = low; not including high side MOSFET leakage |
0.2 | 1.5 | μA | |||
| VUVLO | Undervoltage lockout threshold | VIN rising | 2.1 | 2.3 | V | |||
| VIN falling | 1.95 | 2.1 | V | |||||
| ENABLE | ||||||||
| VIH | High-level input voltage | 0.9 | V | |||||
| VIL | Low-level input voltage | 0.4 | V | |||||
| Ilkg,EN | Input leakage current | EN connected to GND or VIN; TJ = –40°C to 85°C | 0.01 | 0.1 | μA | |||
| POWER SWITCH | ||||||||
| RDS(on),HS | High Side MOSFET on resistance | VIN = 3.6V; TJ = –40°C to 125°C | 95 | 155 | mΩ | |||
| VIN = 2.5V | 170 | mΩ | ||||||
| Ilkg,HS | High Side MOSFET leakage current | VIN = 5.5V; TJ = –40°C to 85°C | 2.6 | μA | ||||
| RDS(on),LS | Low Side MOSFET on resistance | VIN = 3.6V; TJ = –40°C to 125°C | 75 | 155 | mΩ | |||
| VIN = 2.5V | 100 | mΩ | ||||||
| Ilkg,LS | Low Side MOSFET leakage current | VIN = 5.5V; TJ = –40°C to 85°C | 1 | μA | ||||
| Resistor in parallel to Low Side MOSFET | 250 | kΩ | ||||||
| RDIS | Discharge resistor for power-down sequence | only active after a first power-up (EN = high to low after VIN applied) | 12 | Ω | ||||
| Average High Side MOSFET current limit | 1680 | 2100 | 2850 | mA | ||||
| Input current limit under short-circuit conditions | VOUT shorted to ground | 150 | mA | |||||
| Thermal shutdown | Temperature rising | 140 | °C | |||||
| Thermal shutdown hysteresis | Temperature falling | 10 | °C | |||||
| OSCILLATOR | ||||||||
| fSW | Nominal oscillator frequency | IOUT = 0mA | 5.5 | MHz | ||||
| OUTPUT | ||||||||
| VOUT,nom | Nominal output voltage | 2.85 | V | |||||
| Output voltage accuracy | 3.25V ≤ VIN ≤ 3.85V, 0mA ≤ IO ≤ 960 mA | 0.98×VOUT,NOM | VOUT,NOM | 1.02×VOUT,NOM | V | |||
| 3.85V ≤ VIN ≤ 5.5V, 0mA ≤ IO ≤ 1600 mA | 0.98×VOUT,NOM | VOUT,NOM | 1.02×VOUT,NOM | V | ||||
| Line regulation | VIN = VOUT + 0.5V (min 3.25V) to 5.5V, IO = 200 mA | 0.2 | %/V | |||||
| Load regulation | IO = 0mA to 1600 mA | –0.00085 | %/mA | |||||
| FB pin input resistance | 1.4 | MΩ | ||||||
| MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| Start-up delay time | IO = 0mA, Time from EN = high to start switching | 120 | 300 | µs | ||
| tRAMP | ramp time | IO = 0mA, Time from start switching until 95% of nominal output voltage | 150 | µs | ||
| Shutdown time | IO = 0mA, Time from EN = low to VO < 500mV, Effective Output Capacitance CO_effective = 5µF | 300 | µs | |||
| TABLE OF GRAPHS | FIGURE | ||
|---|---|---|---|
| η | Efficiency | vs Load current | Figure 1, Figure 2, Figure 3, Figure 4 |
| vs Input voltage | Figure 5 | ||
| Load transient response | Figure 8, Figure 9, Figure 10, Figure 11, Figure 12, Figure 13, Figure 14 | ||
| AC load transient response | Figure 15 | ||
| Line Transient Response | Figure 16 | ||
| VOUT | DC output voltage | vs Load current | Figure 6, Figure 7 |
| fsw | PWM switching frequency | vs Input voltage | Figure 17 |
| PWM switching frequency | vs Load Current | Figure 18 | |
| PWM operation | Figure 19 | ||
| Spread spectrum frequency modulation operation | Figure 20 | ||
| Start-up | Figure 21, Figure 22 | ||
| Shutdown | Figure 23 | ||
Figure 1. Efficiency Vs Load Current
Figure 2. Efficiency Vs Load Current 


Figure 9. Load Transient Response
Figure 11. Load Transient Response 
Figure 15. AC Load Transient Response
Figure 17. PWM Switching Frequency Vs Input Voltage
Figure 19. PWM Operation
Figure 21. Start-Up
Figure 23. Shutdown 


Figure 10. Load Transient Response
Figure 12. Load Transient Response 
Figure 16. Line Transient Response
Figure 18. PWM Switching Frequency Vs Load Current
Figure 20. Spread Spectrum Frequency Modulation Operation
Figure 22. Start-Up