SLVSB04A July   2011  – August 2015 TPS65186

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements: Data Transmission
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Wake-Up and Power-Up Sequencing
      2. 8.3.2  Dependencies Between Rails
      3. 8.3.3  Soft Start
      4. 8.3.4  VPOS/VNEG Supply Tracking
      5. 8.3.5  V3P3 Power Switch
      6. 8.3.6  VCOM Adjustment
        1. 8.3.6.1 Kick-Back Voltage Measurement
        2. 8.3.6.2 Storing the VCOM Power-Up Default Value in Memory
      7. 8.3.7  Fault Handling and Recovery
      8. 8.3.8  Power Good Pin
      9. 8.3.9  Interrupt Pin
      10. 8.3.10 Panel Temperature Monitoring
        1. 8.3.10.1 NTC Bias Circuit
        2. 8.3.10.2 Hot, Cold, and Temperature-Change Interrupts
        3. 8.3.10.3 Typical Application of the Temperature Monitor
    4. 8.4 Device Functional Modes
      1. 8.4.1 SLEEP
      2. 8.4.2 STANDBY
      3. 8.4.3 ACTIVE
      4. 8.4.4 Mode Transitions
        1. 8.4.4.1 SLEEP → ACTIVE
        2. 8.4.4.2 SLEEP → STANDBY
        3. 8.4.4.3 STANDBY → ACTIVE
        4. 8.4.4.4 ACTIVE → STANDBY
        5. 8.4.4.5 STANDBY → SLEEP
        6. 8.4.4.6 ACTIVE → SLEEP
    5. 8.5 Programming
      1. 8.5.1 I2C Bus Operation
    6. 8.6 Register Maps
      1. 8.6.1  Thermistor Readout (TMST_VALUE)
      2. 8.6.2  Enable (ENABLE)
      3. 8.6.3  Voltage Adjustment Register (VADJ)
      4. 8.6.4  VCOM 1 (VCOM1)
      5. 8.6.5  VCOM 2 (VCOM2)
      6. 8.6.6  Interrupt Enable 1 (INT_EN1)
      7. 8.6.7  Interrupt Enable 2 (INT_EN2)
      8. 8.6.8  Interrupt 1 (INT1)
      9. 8.6.9  Interrupt 2 (INT2)
      10. 8.6.10 Power Up Sequence Register 0 (UPSEQ0)
      11. 8.6.11 Power Up Sequence Register 1 (UPSEQ1)
      12. 8.6.12 Power Down Sequence Register 0 (DWNSEQ0)
      13. 8.6.13 Power Down Sequence Register 1 (DWNSEQ1)
      14. 8.6.14 Thermistor Register 1 (TMST1)
      15. 8.6.15 Thermistor Register 2 (TMST2)
      16. 8.6.16 Power Good Status (PG)
      17. 8.6.17 Revision and Version Control (REVID)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Input voltage at VIN(2), VIN_P, VIN3P3 –0.3 7 V
Ground pins to system ground –0.3 0.3 V
Voltage at SDA, SCL, WAKEUP, PWRUP, VCOM_CTRL, VDDH_FB, VEE_FB, PWR_GOOD, nINT –0.3 3.6 V
Voltage on VB, VB_SW, VPOS_IN, VDDH_IN –0.3 20 V
Voltage on VN, VEE_IN, VCOM_PWR, VNEG_IN –20 0.3 V
Voltage from VIN_P to VN_SW –0.3 30 V
Peak output current Internally limited mA
Continuous total power dissipation 2 W
TJ Operating junction temperature –10 125 °C
TA Operating ambient temperature(3) –10 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) TI recommends that copper plane in proper size on board be in contact with die thermal pad to dissipate heat efficiently. Thermal pad is electrically connected to PBKG, which is supposed to be tied to the output of buck-boost converter. Thus wide copper trace in the buck-boost output will help heat dissipated efficiently.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage at VIN, VIN_P, VIN3P3 3 3.7 6 V
Voltage at SDA, SCL, WAKEUP, PWRUP, VCOM_CTRL, VDDH_FB, VEE_FB, PWR_GOOD, nINT 0 3.6 V
TA Operating ambient temperature –10 85 °C
TJ Operating junction temperature –10 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS65186 UNIT
RGZ [VQFN]
48 PINS
RθJA Junction-to-ambient thermal resistance 30 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 15.6 °C/W
RθJB Junction-to-board thermal resistance 6.6 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 6.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VIN = 3.7 V, TA = –10°C to 85ºC, Typical values are at TA = 25ºC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE
VIN Input voltage range 3 3.7 6 V
VUVLO Undervoltage lockout threshold VIN falling 2.9 V
VHYS Undervoltage lockout hysteresis VIN rising 400 mV
INPUT CURRENT
IQ Operating quiescent current into VIN Device switching, no load 5.5 mA
ISTD Operating quiescent current into VIN Device in standby mode 130 µA
ISLEEP Shutdown current Device in sleep mode 3.5 10 µA
INTERNAL SUPPLIES
VINT_LDO Internal supply 2.7 V
CINT_LDO Nominal output capacitor Capacitor tolerance ±10% 1 4.7 µF
VREF Internal supply 2.25 V
CREF Nominal output capacitor Capacitor tolerance ±10% 3.3 4.7 µF
DCDC1 (POSITIVE BOOST REGULATOR)
VIN Input voltage range 3 3.7 6 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VOUT Output voltage range 16 V
DC set tolerance –4.5% 4.5%
IOUT Output current 250 mA
RDS(ON) MOSFET ON-resistance VIN = 3.7 V 350 mΩ
ILIMIT Switch current limit 1.5(1) A
Switch current accuracy –30% 30%
fSW Switching frequency 1 MHz
LDCDC1 Inductor 2.2 µH
CDCDC1 Nominal output capacitor Capacitor tolerance ±10% 1 2 × 4.7 µF
ESR Output capacitor ESR 20 mΩ
DCDC2 (INVERTING BUCK-BOOST REGULATOR)
VIN Input voltage range 3 3.7 6 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VOUT Output voltage range –16 V
DC set tolerance –4.5% 4.5%
IOUT Output current 250 mA
RDS(ON) MOSFET ON-resistance VIN = 3.7 V 350 mΩ
ILIMIT Switch current limit 1.5(1)  A
Switch current accuracy –30% 30%
LDCDC1 Inductor 4.7 µH
CDCDC1 Nominal output capacitor Capacitor tolerance ±10% 1 3x4.7 µF
ESR Capacitor ESR 20 mΩ
LDO1 (VPOS)
VPOS_IN Input voltage range 15.2 16 16.8 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VSET Output voltage set value VIN = 16 V,
VSET[2:0] = 0x3h to 0x6h		 14.25 15 15 V
VINTERVAL Output voltage set resolution VIN = 16 V 250 mV
VOUTTOL Output tolerance VSET = 15 V, ILOAD = 20 mA –1% 1%
VDROPOUT Dropout voltage ILOAD = 120 mA 250 mV
VLOADREG Load regulation – DC ILOAD = 10% to 90% 1%
ILOAD Load current range 120 mA
ILIMIT Output current limit 120 mA
CLDO1 Nominal output capacitor Capacitor tolerance ±10% 1 4.7 µF
LDO2 (VNEG)
VNEG_IN Input voltage range 16.8 16 –15.2 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VSET Output voltage set value VIN = –16 V
VSET[2:0] = 0x3h to 0x6h		 –15 –15 –14.25 V
VINTERVAL Output voltage set resolution VIN = –16 V 250 mV
VOUTTOL Output tolerance VSET = –15 V, ILOAD = –20 mA –1% 1%
VDROPOUT Dropout voltage ILOAD = 120 mA 250 mV
VLOADREG Load regulation – DC ILOAD = 10% to 90% of ILOAD,MAX 1%
ILOAD Load current range 120 mA
ILIMIT Output current limit 120 mA
CLDO2 Nominal output capacitor Capacitor tolerance ±10% 1 4.7 µF
LD01 (POS) AND LDO2 (VNEG) TRACKING
VDIFF Difference between VPOS and VNEG VSET = ±15 V,
ILOAD = ±20 mA, 0°C to 60°C		 –50 50 mV
VCOM DRIVER
IVCOM Drive current 15 mA
VCOM Allowed operating range Outside this range VCOM is shut down and VCOMF interrupt is set –5.5 1 V
Accuracy VCOM[8:0] = 0x07Dh
(–1.25 V), VIN = 3.4 V to 4.2 V, no load 		–0.8% 0.8%
VCOM[8:0] = 0x07Dh
(–1.25 V), VIN = 3 V to 6 V, no load 		–1.5% 1.5%
Output voltage range –5.11 0 V
Resolution 1LSB 10 mV
Max number of EEPROM writes VCOM calibration 100
ROUT Output impedance VCOM_CTRL = high, Hi-Z = 0 5 Ω
RIN Input impedance, HiZ state HiZ = 1 150 MΩ
CVCOM Nominal output capacitor Capacitor tolerance ±10% 3.3 4.7 µF
CP1 (VDDH) CHARGE PUMP
VDDH_IN Input voltage range 15.2 16 16.8 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VFB Feedback voltage 0.998 V
Accuracy ILOAD = 2 mA –2% 2%
VDDH_OUT Output voltage range VSET = 22 V, ILOAD = 2 mA 21 22 23 V
ILOAD Load current range 10 mA
fSW Switching frequency 560 kHz
CD Driver capacitor 10 nF
CO Output capacitor 1 2.2 µF
CP2 (VEE) NEGATIVE CHARGE PUMP
VEE_IN Input voltage range 16.8 –16 –15.2 V
PG Power good threshold Fraction of nominal output voltage 90%
Power good time-out Not tested in production 50 ms
VFB Feedback voltage –0.994 V
Accuracy ILOAD = 2 mA –2% 2%
VEE_OUT Output voltage range VSET = –20 V, ILOAD = 3 mA –21 –20 –19 V
ILOAD Load current range 12 mA
fSW Switching frequency 560 kHz
CD Driver capacitor 10 nF
CO Nominal output capacitor Capacitor tolerance ±10% 1 2.2 µF
VIN3P3 TO V3P3 SWITCH
RDS(ON) MOSFET ON-resistance VIN3P3 = 3.3 V, ID = 10 mA
Over full temperature range		 10.5 Ω
VIN3P3 = 2.7 V, ID = 10 mA
Over full temperature range		 12.3
RDIS Discharge impedance to ground V3P3EN = 0 800 1000 1200 Ω
THERMISTOR MONITOR(2)
ATMS Temperature to voltage ratio Not tested in production –0.0161 V/°C
OffsetTMS Offset Temperature = 0°C 1.575 V
VTMS_HOT Temp hot trip voltage (T = 50°C) TEMP_HOT_SET = 0x8C 0.768 V
VTMS_COOL Temp hot escape voltage (T = 45°C) TEMP_COOL_SET = 0x82 0.845 V
VTMS_MAX Maximum input level 2.25 V
RNTC_PU Internal pullup resistor 7.307 kΩ
RLINEAR External linearization resistor 43 kΩ
ADCRES ADC resolution Not tested in production, 1 bit 16.1 mV
ADCDEL ADC conversion time Not tested in production 19 µs
TMSTTOL Accuracy Not tested in production –1 1 LSB
LOGIC LEVELS AND TIMING CHARTERISTICS (SCL, SDA, nINT, PWR_GOOD, PWRUP)
VOL Output low threshold level IO = 3 mA, sink current
(SDA, nINT, PWR_GOOD)		 0.4 V
VIL Input low threshold level 0.4 V
VIH Input high threshold level 1.2 V
I(bias) Input bias current VIO = 1.8 V 1 µA
tdeglitch Deglitch time, WAKEUP pin Not tested in production 500 µs
Deglitch time, PWRUP pin Not tested in production 400
fSCL SCL clock frequency 400 kHz
I2C slave address 7-bit address 0 × 48h(3)
OSCILLATOR
fOSC Oscillator frequency 9 MHz
Frequency accuracy TA = –40°C to 85°C –10% 10%
THERMAL SHUTDOWN
TSHTDWN Thermal trip point 150 °C
Thermal hysteresis 20 °C
(1) Contact TI for 1-A, 2-A, or 2.5-A option.
(2) 10-kΩ Murata NCP18XH103F03RB thermistor (1%) in parallel with a linearization resistor (43 kΩ, 1%) are used at TS pin for panel temperature measurement.
(3) Contact TI for alternate address of 0 × 68h.

7.6 Timing Requirements: Data Transmission

VBAT = 3.6 V ±5%, TA = 25ºC, CL = 100 pF (unless otherwise noted)
MIN NOM MAX UNIT
f(SCL) Serial clock frequency 100 400 kHz
tHD;STA Hold time (repeated) START condition. After this period, the first clock pulse is generated. SCL = 100 kHz 4 µs
SCL = 400 kHz 600 ns
tLOW LOW period of the SCL clock SCL = 100 kHz 4.7 µs
SCL = 400 kHz 1.3
tHIGH HIGH period of the SCL clock SCL = 100 kHz 4 µs
SCL = 400 kHz 600 ns
tSU;STA Setup time for a repeated START condition SCL = 100 kHz 4.7 µs
SCL = 400 kHz 600 ns
tHD;DAT Data hold time SCL = 100 kHz 0 3.45 µs
SCL = 400 kHz 0 900 ns
tSU;DAT Data setup time SCL = 100 kHz 250 ns
SCL = 400 kHz 100
tr Rise time of both SDA and SCL signals SCL = 100 kHz 1000 ns
SCL = 400 kHz 300
tf Fall time of both SDA and SCL signals SCL = 100 kHz 300 ns
SCL = 400 kHz 300
tSU;STO Setup time for STOP condition SCL = 100 kHz 4 µs
SCL = 400 kHz 600 ns
tBUF Bus Free Time Between Stop and Start Condition SCL = 100 kHz 4.7 µs
SCL = 400 kHz 1.3
tSP Pulse width of spikes that must be suppressed by the input filter SCL = 100 kHz n/a n/a ns
SCL = 400 kHz 0 50
Cb Capacitive load for each bus line SCL = 100 kHz 400 pF
SCL = 400 kHz 400
TPS65186 i2c_data_transmission_lvsaq8.gifFigure 1. I2C Data Transmission Timing
TPS65186 pwr_timing1.gif
Minimum delay time between WAKEUP rising edge and IC ready to accept I2C transaction.
In this example, the first power-up sequence is started by pulling the PWRUP pin high (rising edge). Power-down is initiated by pulling the WAKEUP pin low (device enters sleep mode). The second power-up sequence is initiated by pulling the WAKEUP pin high while the PWRUP pin is also high (power up from sleep to active).
Figure 2. Power-Up and Power-Down Timing Diagram

7.7 Typical Characteristics

TPS65186 dflt_pwrup_lvsaq8.gif
Figure 3. Default Power-Up Sequence
TPS65186 inrush_3v_lvsaq8.gif
VIN = 3.7 V CIN = 100 µF
Figure 5. Inrush Current
TPS65186 switching_vn_lvsaq8.gif
VIN = 3 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 7. Switching Waveforms, VN
TPS65186 switching_vn2_lvsaq8.gif
VIN = 3.7 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 9. Switching Waveforms, VN
TPS65186 switching_vn3_lvsaq8.gif
VIN = 5 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 11. Switching Waveforms, VN
TPS65186 3p3v_swtch_imp_lvsaq8.gif
VIN = 3.7 V ILOAD, V3p3 = 10 mA
Figure 13. 3p3V Switch Impedance
TPS65186 vcom_int_nonlin_lvsaq8.gif
VIN = 3.7 V RLOAD, VCOM = 1 kΩ
Figure 15. VCOM Integrated Non-Linearity
TPS65186 kickback_error_lvsaq8.gif
VIN = 3.7 V
Figure 17. Kickback Voltage Measurement Error
TPS65186 kickback_timing2_lvsaq8.gif
VIN = 3.7 V AVG[1:0] = 11 (Eight Measurements)
Time from ACQ Bit Set to ACQC Interrupt Received
Figure 19. Kickback Voltage Measurement Timing
TPS65186 dflt_pwrdwn_lvsaq8.gif
Figure 4. Default Power-Down Sequence
TPS65186 inrush_5v_lvsaq8.gif
VIN = 5 V CIN = 100 µF
Figure 6. Inrush Current
TPS65186 switching_vb_lvsaq8.gif
VIN = 3 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 8. Switching Waveforms, VB
TPS65186 switching_vb2_lvsaq8.gif
VIN = 3.7 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 10. Switching Waveforms, VB
TPS65186 switching_vb3_lvsaq8.gif
VIN = 5 V RLOAD, VPOS = 330 Ω RLOAD, VNEG = 330 Ω
No Load on VDDH, VEE
Figure 12. Switching Waveforms, VB
TPS65186 src_driver_lvsaq8.gif
VIN = 3.7 V
Figure 14. Source Driver Supply Tracking
TPS65186 vcom_diff_nonlin_lvsaq8.gif
VIN = 3.7 V RLOAD, VCOM = 1 kΩ
Figure 16. VCOM Differential Non-Linearity
TPS65186 kickback_timing1_lvsaq8.gif
VIN = 3.7 V AVG[1:0] = 00 (Single Measurement)
Time from ACQ Bit Set to ACQC Interrupt Received
Figure 18. Kickback Voltage Measurement Timing