SBVS123C December 2008 – March 2025 TPS737-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VIN | Input voltage range(1)(2) | 2.2 | 5.5 | V | |||
| VFB | Internal reference | TJ = 25°C | 1.192 | 1.204 | 1.216 | V | |
| VOUT | Output voltage range (TPS73701)(3) | VFB | 5.5 - VDO | V | |||
| Accuracy(1)(4) | Nominal | TJ = 25°C | –1 | 1 | % | ||
| 5.36V < VIN < 5.5V, VOUT = 5.08V, 10mA < IOUT < 800mA, –40°C < TJ < 85°C, TPS73701, legacy silicon |
–2 | 2 | |||||
| over VIN, IOUT, and T | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1A, legacy silicon | –3 | ±0.5 | 3 | |||
| VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1A, new silicon | –1.5 | ±0.5 | 1.5 | ||||
| ΔVOUT(ΔVIN) | Line regulation(1) | VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V | 0.01 | %/V | |||
| ΔVOUT(ΔIOUT) | Load regulation | 1mA ≤ IOUT ≤ 1A | 0.002 | %/mA | |||
| ΔVOUT(ΔIOUT) | Load regulation | 10mA ≤ IOUT ≤ 1 A | 0.0005 | %/mA | |||
| VDO | Dropout voltage(5) (VIN = VOUT(nom) - 0.1V) | IOUT = 1A | 130 | 500 | mV | ||
| ZO(DO) | Output impedance in dropout | 2.2V ≤ VIN ≤ VOUT + VDO | 0.25 | Ω | |||
| ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | 1.05 | 1.6 | 2.2 | A | |
| ISC | Short-circuit current | VOUT = 0V | 450 | mA | |||
| IREV | Reverse leakage current(6) (-IIN) | VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT | 0.1 | µA | |||
| IGND | Ground pin current | IOUT = 10mA (IQ) | 400 | µA | |||
| IGND | Ground pin current | IOUT = 1A, legacy silicon | 1300 | µA | |||
| IGND | Ground pin current | IOUT = 1A, new silicon | 880 | µA | |||
| ISHDN | Shutdown current (IGND) | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V | 20 | nA | |||
| IFB | Feedback pin current | 0.1 | 0.6 | µA | |||
| PSRR | Power-supply rejection ratio (ripple rejection) | f = 100Hz, IOUT = 1A | 58 | dB | |||
| f = 10kHz, IOUT = 1A | 37 | ||||||
| VN | Output noise voltage, BW = 10Hz to 100kHz | COUT = 10µF | 27 x VOUT | µVRMS | |||
| tSTR | Startup time | VOUT = 3V, RL = 30Ω, COUT = 1μF | 600 | µs | |||
| VEN(high) | EN pin high (enabled) | 1.7 | VIN | V | |||
| VEN(low) | EN pin low (shutdown) | 0 | 0.5 | V | |||
| IEN | Enable pin current (enabled) | VEN = 5.5V | 20 | nA | |||
| TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
| Reset, temperature decreasing | 140 | ||||||
| TJ | Operating junction temperature | –40 | 125 | ℃ | |||