SBVS123C December   2008  – March 2025 TPS737-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Noise
      2. 6.3.2 Internal Current Limit
      3. 6.3.3 Enable Pin and Shutdown
      4. 6.3.4 Reverse Current
      5. 6.3.5 Thermal Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Dropout Voltage
        3. 7.2.2.3 Transient Response
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Improve PSRR and Noise Performance
        2. 7.4.1.2 Power Dissipation
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TPS737-Q1 New silicon TPS737-Q1 Legacy silicon UNIT
DRB (VSON) DRB (VSON)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 49.4 52.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 76.6 59.4 °C/W
RθJB Junction-to-board thermal resistance 22.0 19.3 °C/W
ψJT Junction-to-top characterization parameter 3.8 2 °C/W
ψJB Junction-to-board characterization parameter 22.0 19.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.8 11.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.