SBVS233B January   2016  – June 2021 TPS7A84

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configurations and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Low-Noise, High-PSRR Output
      2. 7.3.2  Integrated Resistance Network (ANY-OUT)
      3. 7.3.3  Bias Rail
      4. 7.3.4  Power-Good Function
      5. 7.3.5  Programmable Soft-Start
      6. 7.3.6  Internal Current Limit (ILIM)
      7. 7.3.7  Enable
      8. 7.3.8  Active Discharge Circuit
      9. 7.3.9  Undervoltage Lockout (UVLO)
      10. 7.3.10 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation with 1.1 V ≤ VIN < 1.4 V
      2. 7.4.2 Operation with 1.4 V ≤ VIN ≤ 6.5 V
      3. 7.4.3 Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
      2. 8.1.2  Input and Output Capacitor Requirements (CIN and COUT)
      3. 8.1.3  Noise-Reduction and Soft-Start Capacitor (CNR/SS)
      4. 8.1.4  Feed-Forward Capacitor (CFF)
      5. 8.1.5  Soft-Start and In-Rush Current
      6. 8.1.6  Optimizing Noise and PSRR
      7. 8.1.7  Charge Pump Noise
      8. 8.1.8  ANY-OUT Programmable Output Voltage
      9. 8.1.9  ANY-OUT Operation
      10. 8.1.10 Increasing ANY-OUT Resolution for LILO Conditions
      11. 8.1.11 Current Sharing
      12. 8.1.12 Adjustable Operation
      13. 8.1.13 Sequencing Requirements
        1. 8.1.13.1 Sequencing with a Power-Good DC-DC Converter Pin
        2. 8.1.13.2 Sequencing with a Microcontroller (MCU)
      14. 8.1.14 Power-Good Operation
      15. 8.1.15 Undervoltage Lockout (UVLO) Operation
      16. 8.1.16 Dropout Voltage (VDO)
      17. 8.1.17 Behavior when Transitioning from Dropout into Regulation
      18. 8.1.18 Load Transient Response
      19. 8.1.19 Negatively-Biased Output
      20. 8.1.20 Reverse Current Protection
      21. 8.1.21 Power Dissipation (PD)
      22. 8.1.22 Estimating Junction Temperature
      23. 8.1.23 Recommended Area for Continuous Operation (RACO)
    2. 8.2 Typical Applications
      1. 8.2.1 Low-Input, Low-Output (LILO) Voltage Conditions
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical Application for a 5.0-V Rail
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.