SBVS233B January   2016  – June 2021 TPS7A84

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Low-Noise, High-PSRR Output
      2. 7.3.2  Integrated Resistance Network (ANY-OUT)
      3. 7.3.3  Bias Rail
      4. 7.3.4  Power-Good Function
      5. 7.3.5  Programmable Soft-Start
      6. 7.3.6  Internal Current Limit (ILIM)
      7. 7.3.7  Enable
      8. 7.3.8  Active Discharge Circuit
      9. 7.3.9  Undervoltage Lockout (UVLO)
      10. 7.3.10 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation with 1.1 V ≤ VIN < 1.4 V
      2. 7.4.2 Operation with 1.4 V ≤ VIN ≤ 6.5 V
      3. 7.4.3 Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
      2. 8.1.2  Input and Output Capacitor Requirements (CIN and COUT)
      3. 8.1.3  Noise-Reduction and Soft-Start Capacitor (CNR/SS)
      4. 8.1.4  Feed-Forward Capacitor (CFF)
      5. 8.1.5  Soft-Start and In-Rush Current
      6. 8.1.6  Optimizing Noise and PSRR
      7. 8.1.7  Charge Pump Noise
      8. 8.1.8  ANY-OUT Programmable Output Voltage
      9. 8.1.9  ANY-OUT Operation
      10. 8.1.10 Increasing ANY-OUT Resolution for LILO Conditions
      11. 8.1.11 Current Sharing
      12. 8.1.12 Adjustable Operation
      13. 8.1.13 Sequencing Requirements
        1. 8.1.13.1 Sequencing with a Power-Good DC-DC Converter Pin
        2. 8.1.13.2 Sequencing with a Microcontroller (MCU)
      14. 8.1.14 Power-Good Operation
      15. 8.1.15 Undervoltage Lockout (UVLO) Operation
      16. 8.1.16 Dropout Voltage (VDO)
      17. 8.1.17 Behavior when Transitioning from Dropout into Regulation
      18. 8.1.18 Load Transient Response
      19. 8.1.19 Negatively-Biased Output
      20. 8.1.20 Reverse Current Protection
      21. 8.1.21 Power Dissipation (PD)
      22. 8.1.22 Estimating Junction Temperature
      23. 8.1.23 Recommended Area for Continuous Operation (RACO)
    2. 8.2 Typical Applications
      1. 8.2.1 Low-Input, Low-Output (LILO) Voltage Conditions
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical Application for a 5.0-V Rail
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.16 Dropout Voltage (VDO)

Generally speaking, the dropout voltage often refers to the minimum voltage difference between the input and output voltage (VDO = VIN – VOUT) that is required for regulation. When VIN drops below the required VDO for the given load current, the device functions as a resistive switch and does not regulate output voltage. Dropout voltage is proportional to the output current because the device is operating as a resistive switch; see the Figure 6-22, Figure 6-23, and Figure 6-24 curves.

Dropout voltage is affected by the drive strength for the gate of the pass element, which is nonlinear with respect to VIN on this device because of the internal charge pump. The charge pump causes a higher dropout voltage at lower input voltages when a bias rail is not used, as illustrated in the Figure 6-20 curve.

For this device, dropout voltage increases exponentially when the input voltage nears its maximum operating voltage because the charge pump is internally clamped to 8.0 V; see the Figure 6-20 and Figure 6-21 curves.