SLVSJ14 August   2025 UCC57132-Q1 , UCC57138-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Overcurrent (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7  Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Switching Characteristics

VDD = 15 V, VEE = 0 V, 1-µF capacitor from VDD to COM, 1-µF capacitor from VEE to COM, TJ = –40°C to +150°C, CL = 0 pF, unless otherwise noted. (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tR Output Rise Time CL=1.8 nF, 10% to 90%, Vin = 0 to 3.3 V 8 18 ns
tF Output Fall Time CL=1.8 nF, 90% to 10%, Vin = 0 to 3.3 V 14 32 ns
tD2 Propagation Delay – Input falling to output falling CL=1.8 nF, from 1 V falling on Vin to 90% of output fall, Vin=0 - 3.3 V, Fsw=500 kHz, 50% duty cycle 28 50 ns
tD1 Propagation Delay – Input rising to output rising CL=1.8 nF, from 2 V rising on Vin to 10% of output rise, Vin=0 - 3.3 V, Fsw=500 kHz, 50% duty cycle 26 50 ns
tPD_DIS DIS Response Delay CL=1.8 nF, from 1 V falling on EN to 90% of output fall, EN=0 - 3.3 V 27 45 ns
tPWD Pulse Width Distortion Input Pulse Width = 100 ns, 500 kHz
|tD2_1 – tD1_1|		 -10 10 ns
(1) Switching parameters are not tested in production.