SLVSJ02A July   2025  – October 2025 UCC57142-Q1 , UCC57148-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagram
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Overcurrent (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7  Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Switching Characteristics

VDD = 15V, 1µF capacitor from VDD to COM, TJ = –40°C to +150°C, CL = 0pF, unless otherwise noted. (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tR Output Rise Time CL=1.8nF, 10% to 90%, Vin = 0 to 3.3V 8 18 ns
tF Output Fall Time CL=1.8nF, 90% to 10%, Vin = 0 to 3.3V 14 32 ns
tD2 Propagation Delay – Input falling to output falling CL=1.8nF, from 1V falling on Vin to 90% of output fall, Vin=0 - 3.3V, Fsw=500kHz, 50% duty cycle 28 50 ns
tD1 Propagation Delay – Input rising to output rising CL=1.8nF, from 2V rising on Vin to 10% of output rise, Vin=0 - 3.3V, Fsw=500kHz, 50% duty cycle 26 50 ns
tPD_DIS DIS Response Delay CL=1.8nF, from 1V falling on EN to 90% of output fall, EN=0 - 3.3V 27 45 ns
tPWD Pulse Width Distortion Input Pulse Width = 100ns, 500kHz
|tD2_1 – tD1_1|		 -10 10 ns
(1) Switching parameters are not tested in production.