JAJSGQ2F August   2013  – March 2019

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
      2.      充電器の効率
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Maximum Power Point Tracking
      2. 7.3.2 Battery Undervoltage Protection
      3. 7.3.3 Battery Overvoltage Protection
      4. 7.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 7.3.5 Push-Pull Multiplexer Drivers
      6. 7.3.6 Nano-Power Management and Efficiency
    4. 7.4 Device Functional Modes
      1. 7.4.1 Main Boost Charger Disabled (Ship Mode) - (VSTOR > VSTOR_CHGEN and EN = HIGH)
      2. 7.4.2 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      3. 7.4.3 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      4. 7.4.4 Thermal Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Energy Harvester Selection
      2. 8.1.2 Storage Element Selection
      3. 8.1.3 Inductor Selection
      4. 8.1.4 Capacitor Selection
        1. 8.1.4.1 VREF_SAMP Capacitance
        2. 8.1.4.2 VIN_DC Capacitance
        3. 8.1.4.3 VSTOR Capacitance
        4. 8.1.4.4 Additional Capacitance on VSTOR or VBAT_SEC
    2. 8.2 Typical Applications
      1. 8.2.1 Solar Application Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Performance Plots
      2. 8.2.2 TEG Application Circuit
      3. 8.2.3 Design Requirements
        1. 8.2.3.1 Detailed Design Procedure
        2. 8.2.3.2 Application Performance Plots
      4. 8.2.4 Piezoelectric Application Circuit
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
      2. 11.1.2 Zipファイル
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Battery Voltage in Operating Range (VBAT_OK Output)

The IC allows the user to set a programmable voltage in between the VBAT_UV and VBAT_OV settings to indicate whether the VSTOR voltage (and therefore the VBAT_SEC voltage when the PFET between the two pins is turned on) is at an acceptable level. When the battery voltage is decreasing the threshold is set by Equation 3:

Equation 3. bq25505 EQ4_Vbat3_lusah0.gif

When the battery voltage is increasing, the threshold is set by Equation 4:

Equation 4. bq25505 EQ5_Vbat4_lusah0.gif

The sum of the resistors is recommended to be no higher than 13 MΩ, that is, ROK1 + ROK2 + ROK3= 13 MΩ. SLUC484 provides help on sizing and selecting the resistors.

The logic high level of this signal is equal to the VSTOR voltage and the logic low level is ground. The logic high level has ~20 KΩ internally in series to limit the available current to prevent MCU damage until it is fully powered. The VBAT_OK_PROG threshold must be greater than or equal to the UV threshold. Figure 21 shows VBAT_OK operation. Figure 12 shows the relative position of the various threshold voltages.

bq25505 SLUSBJ3_bq25505_relative_thresholds.gifFigure 12. Summary of VSTOR Threshold Voltages