JAJSEW6B February   2018  – February 2024 UCC21222

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety-Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Thermal Derating Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Minimum Pulses
    2. 6.2 Propagation Delay and Pulse Width Distortion
    3. 6.3 Rising and Falling Time
    4. 6.4 Input and Disable Response Time
    5. 6.5 Programmable Dead Time
    6. 6.6 Power-Up UVLO Delay to OUTPUT
    7. 6.7 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21222
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead Time (DT) Pin
        1. 7.4.2.1 DT Pin Tied to VCCI or DT Pin Left Open
        2. 7.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Designing INA/INB Input Filter
        3. 8.2.2.3 Select Dead Time Resistor and Capacitor
        4. 8.2.2.4 Select External Bootstrap Diode and its Series Resistor
        5. 8.2.2.5 Gate Driver Output Resistor
        6. 8.2.2.6 Estimating Gate Driver Power Loss
        7. 8.2.2.7 Estimating Junction Temperature
        8. 8.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.8.1 Selecting a VCCI Capacitor
          2. 8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.8.3 Select a VDDB Capacitor
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement Considerations
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

4 Pin Configuration and Functions

GUID-191E8ADF-7D03-4CDB-87BB-90D01852A163-low.svg Figure 4-1 D Package16-Pin SOICTop View
Table 4-1 Pin Functions
PIN TYPE (1) Description
NAME NO.
DIS 5 I Disables both driver outputs if asserted high, enables if set low or left open. This pin is pulled low internally if left open. Tie this pin to ground if not used to achieve better noise immunity. Bypass using a ≈ 1-nF low ESR/ESL capacitor close to DIS pin when connecting to a µC with distance.
DT 6 I Programmable dead time function.
Tying DT to VCCI or leaving DT open allows the outputs to overlap. Place a resistor (RDT) between DT and GND adjusts dead time according to the equation: DT (in ns) = 10 × RDT (in kΩ). Bypass this pin with a ceramic capacitor, 2.2 nF or greater, to achieve better noise immunity. Place this capacitor and RDT close to the DT pin.
GND 4 P Primary-side ground reference. All signals in the primary side are referenced to this ground.
INA 1 I Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. Tie this pin to ground if not used to achieve better noise immunity.
INB 2 I Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. Tie this pin to ground if not used to achieve better noise immunity.
NC 7 — No internal connection
12
13
OUTA 15 O Output of driver A. Connect to the gate of the A channel FET or IGBT.
OUTB 10 O Output of driver B. Connect to the gate of the B channel FET or IGBT.
VCCI 3 P Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible
VCCI 8 P This pin is internally shorted to pin 3.
VDDA 16 P Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible
VDDB 11 P Secondary-side power for driver B. Locally decoupled to VSSB using a low ESR/ESL capacitor located as close to the device as possible.
VSSA 14 P Ground for secondary-side driver A. Ground reference for secondary side A channel
VSSB 9 P Ground for secondary-side driver B. Ground reference for secondary side B channel
(1) P = power, I = input, O = output