Input offset voltage (V_OS) for the OPA4H014-SEP is specified as ±30 μV typical and ±120 μV maximum at T_A = 25°C. The input offset voltage was measured at multiple supply voltages, with test limits of ±100 μV for guardbanding purposes.

All but one of the devices exposed to neutron irradiation were found to have a measured input offset voltage outside of the specified data sheet limits, across all four device amplifier channels, for at least one of the V_OS tests performed on the ATE. Values reported below are from one example test with V_S = ±9 V (test numbers 1100.0-1103.0). Full data for all ATE tests performed are included in the report appendix.

• Of the three samples tested to 1 × 10¹² n/cm², a mean post-irradiation V_OS magnitude of 68 μV and maximum post-irradiation V_OS magnitude of 152.94 μV were recorded. Only the sample with serial number 1 did not exhibit a parametric shift to a level in excess of the data sheet specification on any channel.
• Of the three samples tested to 5 × 10¹² n/cm², a mean post-irradiation V_OS magnitude of 110.67 μV and maximum post-irradiation V_OS magnitude of 284.55 μV were recorded.
• Of the three samples tested to 1 × 10¹³ n/cm², a mean post-irradiation V_OS magnitude of 186.82 μV and maximum post-irradiation V_OS magnitude of 508.11 μV were recorded.

Figure 4-2 Sample Input Offset Voltage NDD Graph