SBOK079 October   2023 TPS7H2140-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14. 11References

Introduction

The TPS7H2140-SEP is a space-enhanced-plastic, 4.5-V to 32-V input, 5.4-A (1.35-A per channel), quad-channel eFuse. The TPS7H2140-SEP is fully protected with four integrated 160-mΩ (typical) NMOS power FETs. Full diagnostics and high-accuracy current sense enables intelligent control of the loads. An external adjustable current limit improves the reliability of whole system by limiting the inrush overload current.

The device is offered in a 28-pin HTSSOP plastic package. Table 1-1 lists general device information and test conditions. For more detailed technical specifications, user guides, and application notes, see the TPS7H2140-SEP product page.

Table 1-1 Overview Information
Description(1) Device Information
TI part number TPS7H2140-SEP
Orderable number TPS7H2140MPWPTSEP
Device function Quad-channel eFuse
Technology LBC8
Exposure facility Radiation effects facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon)
Heavy ion fluence per run 9.85 × 106 – 1 × 107 ions/cm2
Irradiation temperature 25°C (for SEB/SEGR testing & SET testing), and 125°C (for SEL testing)
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