SLUAB11 November   2025 AMC23C12-Q1 , TMCS1126-Q1 , UCC21750-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 Difference Between SiC and IGBT
    2. 1.2 System SCP Response Time Requirement
    3. 1.3 Different SCP Locations
  5. 2Short-Circuit Mechanism
  6. 3Short Circuit Detection Methods
    1. 3.1 Shunt-Based Method
    2. 3.2 Desaturation-Based Method
    3. 3.3 Hall-Effect Sensor-Based Method
  7. 4Test Setup
  8. 5Measurement Results
    1. 5.1 Shunt Based Measurements
    2. 5.2 Desaturation-Based Measurements
    3. 5.3 Hall-Effect-Sensor Measurements
    4. 5.4 Performance Comparison
  9. 6Conclusion
  10. 7References

4 Test Setup

Figure 4-1 shows the hardware test setup. Two SiC MOSFET in a HU3PAK package with a typical on state resistance of RDS = 25mΩ are used for the measurements. The drain and source pins of the MOSFET SLS are soldered together to maintain a low impedance short circuit. The MOSFET SHS is controlled by a UCC21750-Q1 gate driver and the gate-driver signal is generated by the control PCB using a LAUNCHXL- F280025C launchpad. All three discussed short-circuit detection circuits are implemented on the PCB. For the DC-link capacitor, a total of CB = 20μF film capacitors are used. Multilayer ceramic chip capacitors (MLCCs) are used for the commutation capacitance CC = 100nF (unless otherwise specified) to provide a low inductive commutation path. All the short-circuit detection methods are set to a trigger threshold of 100A. The measurement results of each detection method are analyzed in the following. Only one method is active during each measurement, while the other two methods are deactivated or removed.

Hardware Setup for Short Circuit Measurements Figure 4-1 Hardware Setup for Short Circuit Measurements