SLUAB11 November   2025 AMC23C12-Q1 , TMCS1126-Q1 , UCC21750-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 Difference Between SiC and IGBT
    2. 1.2 System SCP Response Time Requirement
    3. 1.3 Different SCP Locations
  5. 2Short-Circuit Mechanism
  6. 3Short Circuit Detection Methods
    1. 3.1 Shunt-Based Method
    2. 3.2 Desaturation-Based Method
    3. 3.3 Hall-Effect Sensor-Based Method
  7. 4Test Setup
  8. 5Measurement Results
    1. 5.1 Shunt Based Measurements
    2. 5.2 Desaturation-Based Measurements
    3. 5.3 Hall-Effect-Sensor Measurements
    4. 5.4 Performance Comparison
  9. 6Conclusion
  10. 7References

5.3 Hall-Effect-Sensor Measurements

For the hall-effect-based measurements, the turn-on gate resistance RG,on needs to be modified to detect the short-circuit event. In the meantime, the slew rate of the current can be decreased by increasing turn-on resistance RG,on.

Therefore, in these measurements, the resistance RG,on is increased from 15Ω to 25Ω. In Figure 5-5, the measurement results using the hall-sensor-based short-circuit detection is shown. At time 0ns, the gate-source voltage uGS reaches the threshold voltage of the SiC MOSFET and the current iSC starts to rise. The fault signal uhall decreases rapidly at time 700ns, disabling the gate driver. At time 830ns, the gate-source voltage uGS starts to decrease, turning off the MOSFET SHS safely. The overshoot in the drain-source voltage uDS reaches 1090V at the maximum.

Waveforms for Hall-Based Method With RG,off = 35Ω Figure 5-5 Waveforms for Hall-Based Method With RG,off = 35Ω