SLUUCY8 December   2023 BQ77307

 

  1.   1
  2.   Read This First
    1.     About This Manual
    2.     Battery Notational Conventions
    3.     Trademarks
    4.     Glossary
  3. Introduction
  4. Device Description
    1. 2.1 Overview
    2. 2.2 Functional Block Diagram
  5. Device Configuration
    1. 3.1 Direct Commands and Subcommands
    2. 3.2 Configuration Using OTP or Registers
    3. 3.3 Data Formats
      1. 3.3.1 Unsigned Integer
      2. 3.3.2 Integer
      3. 3.3.3 Hex
  6. Device Security
  7. Protection Subsystem
    1. 5.1  Protections Overview
    2. 5.2  Protection Evaluation and Detection
    3. 5.3  Protection FET Drivers
    4. 5.4  Cell Overvoltage Protection
    5. 5.5  Cell Undervoltage Protection
    6. 5.6  Short Circuit in Discharge Protection
    7. 5.7  Overcurrent in Charge Protection
    8. 5.8  Overcurrent in Discharge 1 and 2 Protections
    9. 5.9  Current Protection Latch
    10. 5.10 CHG Detector
    11. 5.11 Overtemperature in Charge Protection
    12. 5.12 Overtemperature in Discharge Protection
    13. 5.13 Internal Overtemperature Protection
    14. 5.14 Undertemperature in Charge Protection
    15. 5.15 Undertemperature in Discharge Protection
    16. 5.16 Cell Open Wire Detection
    17. 5.17 Voltage Reference Diagnostic Protection
    18. 5.18 VSS Diagnostic Protection
    19. 5.19 REGOUT Diagnostic Protection
    20. 5.20 LFO Oscillator Integrity Diagnostic Protection
    21. 5.21 Internal Factory Trim Diagnostic Protection
  8. Device Status and Controls
    1. 6.1 0x00 Control Status() and 0x12 Battery Status() Commands
    2. 6.2 Unused VC Cell Input Pins
    3. 6.3 LDOs
    4. 6.4 ALERT Pin Operation
    5. 6.5 TS Pin Operation
    6. 6.6 Device Event Timing
  9. Operational Modes
    1. 7.1 Overview of Operational Modes
    2. 7.2 NORMAL Mode
    3. 7.3 SHUTDOWN Mode
    4. 7.4 CONFIG_UPDATE Mode
  10. I2C Serial Communications
    1. 8.1 I2C Serial Communications Interface
  11. Commands and Subcommands
    1. 9.1 Direct Commands
    2. 9.2 Bit Field Definitions for Direct Commands
      1. 9.2.1  Safety Alert A Register
      2. 9.2.2  Safety Status A Register
      3. 9.2.3  Safety Alert B Register
      4. 9.2.4  Safety Status B Register
      5. 9.2.5  Battery Status Register
      6. 9.2.6  Alarm Status Register
      7. 9.2.7  Alarm Raw Status Register
      8. 9.2.8  Alarm Enable Register
      9. 9.2.9  FET CONTROL Register
      10. 9.2.10 REGOUT CONTROL Register
    3. 9.3 Command-only Subcommands
    4. 9.4 Subcommands with Data
    5. 9.5 Bitfield Definitions for Subcommands
      1. 9.5.1 DEVICE NUMBER Register
      2. 9.5.2 FW VERSION Register
      3. 9.5.3 HW VERSION Register
      4. 9.5.4 SECURITY KEYS Register
      5. 9.5.5 PROT RECOVERY Register
  12. 10Data Memory
    1. 10.1 Settings
      1. 10.1.1 Settings:Configuration
        1. 10.1.1.1  Settings:Configuration:Reserved
        2. 10.1.1.2  Settings:Configuration:Power Config
        3. 10.1.1.3  Settings:Configuration:REGOUT Config
        4. 10.1.1.4  Settings:Configuration:I2C Address
        5. 10.1.1.5  Settings:Configuration:I2C Config
        6. 10.1.1.6  Settings:Configuration:TS Mode
        7. 10.1.1.7  Settings:Configuration:Vcell Mode
        8. 10.1.1.8  Settings:Configuration:Default Alarm Mask
        9. 10.1.1.9  Settings:Configuration:FET Options
        10. 10.1.1.10 Settings:Configuration:Charge Detector Time
      2. 10.1.2 Settings:Protection
        1. 10.1.2.1 Settings:Protection:Enabled Protections A
        2. 10.1.2.2 Settings:Protection:Enabled Protections B
        3. 10.1.2.3 Settings:Protection:DSG FET Protections A
        4. 10.1.2.4 Settings:Protection:CHG FET Protections A
        5. 10.1.2.5 Settings:Protection:Both FET Protections B
        6. 10.1.2.6 Settings:Protection:Cell Open Wire Check Time
    2. 10.2 Protections
      1. 10.2.1 Protections:Cell Voltage
        1. 10.2.1.1 Protections:Cell Voltage:Cell Undervoltage Protection Threshold
        2. 10.2.1.2 Protections:Cell Voltage:Cell Undervoltage Protection Delay
        3. 10.2.1.3 Protections:Cell Voltage:Cell Undervoltage Protection Recovery Hysteresis
        4. 10.2.1.4 Protections:Cell Voltage:Cell Overvoltage Protection Threshold
        5. 10.2.1.5 Protections:Cell Voltage:Cell Overvoltage Protection Delay
        6. 10.2.1.6 Protections:Cell Voltage:Cell Overvoltage Protection Recovery Hysteresis
      2. 10.2.2 Protections:Current
        1. 10.2.2.1  Protections:Current:Overcurrent in Charge Protection Threshold
        2. 10.2.2.2  Protections:Current:Overcurrent in Charge Protection Delay
        3. 10.2.2.3  Protections:Current:Overcurrent in Discharge 1 Protection Threshold
        4. 10.2.2.4  Protections:Current:Overcurrent in Discharge 1 Protection Delay
        5. 10.2.2.5  Protections:Current:Overcurrent in Discharge 2 Protection Threshold
        6. 10.2.2.6  Protections:Current:Overcurrent in Discharge 2 Protection Delay
        7. 10.2.2.7  Protections:Current:Short Circuit in Discharge Protection Threshold
        8. 10.2.2.8  Protections:Current:Short Circuit in Discharge Protection Delay
        9. 10.2.2.9  Protections:Current:Latch Limit
        10. 10.2.2.10 Protections:Current:Recovery Time
      3. 10.2.3 Protections:Temperature
        1. 10.2.3.1  Protections:Temperature:Overtemperature in Charge Protection Threshold
        2. 10.2.3.2  Protections:Temperature:Overtemperature in Charge Protection Delay
        3. 10.2.3.3  Protections:Temperature:Overtemperature in Charge Protection Recovery
        4. 10.2.3.4  Protections:Temperature:Undertemperature in Charge Protection Threshold
        5. 10.2.3.5  Protections:Temperature:Undertemperature in Charge Protection Delay
        6. 10.2.3.6  Protections:Temperature:Undertemperature in Charge Protection Recovery
        7. 10.2.3.7  Protections:Temperature:Overtemperature in Discharge Protection Threshold
        8. 10.2.3.8  Protections:Temperature:Overtemperature in Discharge Protection Delay
        9. 10.2.3.9  Protections:Temperature:Overtemperature in Discharge Protection Recovery
        10. 10.2.3.10 Protections:Temperature:Undertemperature in Discharge Protection Threshold
        11. 10.2.3.11 Protections:Temperature:Undertemperature in Discharge Protection Delay
        12. 10.2.3.12 Protections:Temperature:Undertemperature in Discharge Protection Recovery
        13. 10.2.3.13 Protections:Temperature:Internal Overtemperature Protection Threshold
        14. 10.2.3.14 Protections:Temperature:Internal Overtemperature Protection Delay
        15. 10.2.3.15 Protections:Temperature:Internal Overtemperature Protection Recovery
    3. 10.3 Power
      1. 10.3.1 Power:Configuration
        1. 10.3.1.1 Power:Configuration:Voltage CHECK Time
        2. 10.3.1.2 Power:Configuration:Body Diode Threshold
      2. 10.3.2 Power:Shutdown
        1. 10.3.2.1 Power:Shutdown:Shutdown Cell Voltage
        2. 10.3.2.2 Power:Shutdown:Shutdown Stack Voltage
        3. 10.3.2.3 Power:Shutdown:Shutdown Temperature
    4. 10.4 Security
      1. 10.4.1 Security:Settings
        1. 10.4.1.1 Security:Settings:Security Settings
        2. 10.4.1.2 Security:Settings:Full Access Key Step 1
        3. 10.4.1.3 Security:Settings:Full Access Key Step 2
      2. 10.4.2 Data Memory Summary
  13. 11Revision History

Overcurrent in Discharge 1 and 2 Protections

The BQ77307 integrates two Overcurrent in Discharge Protections (OCD1, OCD2) using a comparator that monitors the differential voltage across the SRN - SRP pins and triggers an OCD1 or OCD2 alert or fault when the voltage exceeds a programmable threshold VOCD1 and VOCD2, respectively. The VOCD1/2 thresholds are programmable from 4 mV to 200 mV in 2 mV steps using the Protections:Current:Overcurrent in Discharge 1 Protection Threshold and Protections:Current:Overcurrent in Discharge 2 Protection Threshold configuration registers. These two protections operate identically, but can have independent threshold and delay settings. The OCD1 and OCD2 protections are enabled using the Settings:Protection:Enabled Protections A:[OCD1] and [OCD2] configuration bits.

The OCD1/2 circuitry triggers an alert signal when an overcurrent in discharge event is first detected, then triggers a fault if it persists for a programmable detection delay, OCD1_DLY or OCD2_DLY, which can be set as shown below.

Setting Nominal Delay (ms)
0 Fastest (approximately 0.46 ms)
1 to 64 1.22 ms to 20.435 ms in steps of 0.305 ms
65 to 128 22.875 ms to 176.595 ms in steps of 2.44 ms
129 to 192 181.475 ms to 488.915 ms in steps of 4.88 ms
193 to 255 498.675 ms to 1103.795 ms in steps of 9.77 ms

The delay is set by the Protections:Current:Overcurrent in Discharge 1 Protection Delay and Protections:Current:Overcurrent in Discharge 2 Protection Delay configuration registers.

When an OCD fault is triggered, the device turns off the DSG FET if configured for autonomous FET control in Settings:Protection:DSG FET Protections A[OCD1, OCD2]. The device recovers after a programmable delay given by Protections:Current:Recovery Time, which can be set from 1 second to 255 second in 1-second steps. A recovery time setting of 0 disables autonomous recovery, in which case recovery only occurs when the PROT_RECOVERY() command is sent from the host with the appropriate [OCD1REC] or [OCD2REC] bit set. Continual retrying of time-based recovery can be avoided by using the Current Protection Latch feature.

Table 5-13 Overcurrent in Discharge Protection Operation
Status Condition Action
Normal VSRN–VSRP ≤ setting selected by Protections:Current:Overcurrent in Discharge 1 Protection Threshold Safety Alert A()[OCD1] = 0.
Clear current latch counter if no current protection fault occurs for 5 seconds.
Normal VSRN–VSRP ≤ setting selected by Protections:Current:Overcurrent in Discharge 2 Protection Threshold Safety Alert A()[OCD2] = 0.
Clear current latch counter if no current protection fault occurs for 5 seconds.
Alert VSRN–VSRP > setting selected by Protections:Current:Overcurrent in Discharge 1 Protection Threshold Safety Alert A()[OCD1] = 1
Alert VSRN–VSRP > setting selected by Protections:Current:Overcurrent in Discharge 2 Protection Threshold Safety Alert A()[OCD2] = 1
Trip VSRP–VSRN > setting selected by Protections:Current:Overcurrent in Discharge 1 Protection Threshold for Protections:Current:Overcurrent in Discharge 1 Protection Delay duration. Safety Alert A()[OCD1] = 0
Safety Status A()[OCD1] = 1
Increment current latch counter.
Trip VSRP–VSRN > setting selected by Protections:Current:Overcurrent in Discharge 2 Protection Threshold for Protections:Current:Overcurrent in Discharge 2 Protection Delay duration. Safety Alert A()[OCD2] = 0
Safety Status A()[OCD2] = 1
Increment current latch counter.
Recovery Safety Status A()[OCD1] = 1 and
VSRN–VSRP ≤ setting selected by Protections:Current:Overcurrent in Discharge 1 Protection Threshold for Protections:Current:Recovery Time duration.
Safety Status A()[OCD1] = 0
DSG FET can be re-enabled if conditions allow and it is not latched off.
Recovery Safety Status A()[OCD2] = 1 and
VSRN–VSRP ≤ setting selected by Protections:Current:Overcurrent in Discharge 2 Protection Threshold for Protections:Current:Recovery Time duration.
Safety Status A()[OCD2] = 0
DSG FET can be re-enabled if conditions allow and it is not latched off.
Latch Limit Current latch counter ≥ Protections:Current:Latch Limit Safety Status A()[CURLATCH] = 1
DSG FET is latched off and not autonomously re-enabled.