SBOS550C February   2011  – May 2026 TXS4555

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Description
  4. 3Pin Configuration and Functions
  5. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  ESD Ratings
    3. 4.3  Thermal Information
    4. 4.4  Recommended Operating Conditions
    5. 4.5  Electrical Characteristics – Level Translator
    6. 4.6  LDO Electrical Characteristics
    7. 4.7  General Electrical Characteristics
    8. 4.8  Switching Characteristics
    9. 4.9  Operating Characteristics
    10. 4.10 Typical Characteristics
  6. 5Detailed Description
    1. 5.1 Functional Block Diagram
  7. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Input And Output Capacitor Requirements
      2. 6.1.2 Output Noise
      3. 6.1.3 Internal Current Limit
      4. 6.1.4 Dropout Voltage
      5. 6.1.5 Startup
      6. 6.1.6 Transient Response
      7. 6.1.7 Minimum Load
      8. 6.1.8 Thermal Information
        1. 6.1.8.1 Thermal Protection
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

6.1.4 Dropout Voltage

The TXS4555 uses a PMOS pass transistor to achieve low dropout. When (VBAT – VSIM) is less than the dropout voltage (VDO), the PMOS pass device is in its linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO approximately scales with the output current because the PMOS device behaves like a resistor in dropout.