SBOS550C February   2011  – May 2026 TXS4555

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Description
  4. 3Pin Configuration and Functions
  5. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  ESD Ratings
    3. 4.3  Thermal Information
    4. 4.4  Recommended Operating Conditions
    5. 4.5  Electrical Characteristics – Level Translator
    6. 4.6  LDO Electrical Characteristics
    7. 4.7  General Electrical Characteristics
    8. 4.8  Switching Characteristics
    9. 4.9  Operating Characteristics
    10. 4.10 Typical Characteristics
  6. 5Detailed Description
    1. 5.1 Functional Block Diagram
  7. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Input And Output Capacitor Requirements
      2. 6.1.2 Output Noise
      3. 6.1.3 Internal Current Limit
      4. 6.1.4 Dropout Voltage
      5. 6.1.5 Startup
      6. 6.1.6 Transient Response
      7. 6.1.7 Minimum Load
      8. 6.1.8 Thermal Information
        1. 6.1.8.1 Thermal Protection
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

1 Features

  • Level translator
    • VCC range of 1.65V to 3.3V
    • VBATT range from 2.3V to 5.5V
  • Low-dropout (LDO) regulator
    • 50mA LDO regulator with enable
    • Selectable output voltage of 1.8V or 2.95V
    • Input voltage range of 2.3V to 5.5V
    • Very low dropout of 100mV (maximum) at 50mA
  • Incorporates shutdown for the SIM card signals according to ISO7816-3
  • ESD protection exceeds JESD 22
    • 2000V Human-body model (A114-B)
    • 500V Charged-device model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 16-Pin VQFN (3mm × 3mm)
    • 12-Pin UQFN (2mm × 1.7mm)