SCDS384B September   2018  – August 2025 TMUX6119

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1.     Pin Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics (Dual Supplies: ±15V)
    6. 5.6 Switching Characteristics (Dual Supplies: ±15V)
    7. 5.7 Electrical Characteristics (Single Supply: 12V)
    8. 5.8 Switching Characteristics (Single Supply: 12V)
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Truth Tables
  8. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1  On-Resistance
      2. 7.1.2  Off-Leakage Current
      3. 7.1.3  On-Leakage Current
      4. 7.1.4  Transition Time
      5. 7.1.5  Break-Before-Make Delay
      6. 7.1.6  Enable Turn-On and Enable Turn-Off Time
      7. 7.1.7  Charge Injection
      8. 7.1.8  Off Isolation
      9. 7.1.9  Channel-to-Channel Crosstalk
      10. 7.1.10 Bandwidth
      11. 7.1.11 THD + Noise
      12. 7.1.12 AC Power Supply Rejection Ratio (AC PSRR)
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ultra-low Leakage Current
      2. 7.3.2 Ultra-low Charge Injection
      3. 7.3.3 Bidirectional and Rail-to-Rail Operation
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Trademarks
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

7.1.7 Charge Injection

The TMUX6119 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 7-7 and Figure 7-8 shows the setup used to measure charge injection from source to drain and from drain to source. The charge injection is optimized for the TMUX6119 from the direction of source to drain.

TMUX6119 Source to Drain Charge-Injection Measurement SetupFigure 7-7 Source to Drain Charge-Injection Measurement Setup
TMUX6119 Drain to Source Charge-Injection Measurement SetupFigure 7-8 Drain to Source Charge-Injection Measurement Setup