SCDS482A February   2025  – April 2025 TMUX8612

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings: TMUX861x Devices
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions: TMUX861x Devices
    4. 6.4  Source of Drain Continuous Current
    5. 6.5  Source of Drain Pulse Current
    6. 6.6  Thermal Information
    7. 6.7  Electrical Characteristics (Global): TMUX861x Devices
    8. 6.8  Electrical Characteristics (±15V Dual Supply)
    9. 6.9  Electrical Characteristics (±36V Dual Supply)
    10. 6.10 Electrical Characteristics (±50V Dual Supply)
    11. 6.11 Electrical Characteristics (72V Single Supply)
    12. 6.12 Electrical Characteristics (100V Single Supply)
    13. 6.13 Switching Characteristics: TMUX861x Devices
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Device Turn-On and Turn-Off Time
    5. 7.5 Charge Injection
    6. 7.6 Off Isolation
    7. 7.7 Crosstalk
    8. 7.8 Bandwidth
    9. 7.9 THD + Noise
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Flat On-Resistance
      3. 8.3.3 Protection Features
        1. 8.3.3.1 Fail-Safe Logic
        2. 8.3.3.2 ESD Protection
        3. 8.3.3.3 Latch-Up Immunity
      4. 8.3.4 1.8V Logic Compatible Inputs
      5. 8.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Mode
      2. 8.4.2 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.9 Electrical Characteristics (±36V Dual Supply)

VDD = +36V ± 10%, VSS = –36V ± 10%, GND = 0V (unless otherwise noted) 
Typical at TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = –25V to +25V
ID = –10mA		 25°C 14 19.6 Ω
–40°C to +50°C 21
–40°C to +85°C 22.4
–40°C to +125°C 28
ΔRON On-resistance mismatch between channels VS = –25V to +25V
ID = –10mA		 25°C 0.28 0.84 Ω
–40°C to +50°C 1
–40°C to +85°C 1.12
–40°C to +125°C 1.4
RON FLAT On-resistance flatness VS = –25V to +25V
ID = –10mA		 25°C 0.25 Ω
RON DRIFT On-resistance drift VS = 0V, IS = –10mA –40°C to +125°C 0.08 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 39.6V, VSS = –39.6V
Switch state is off
VS = +25V / –25V
VD = –25V / +25V		 25°C 30 150 pA
–40°C to +50°C –350 110 350
–40°C to +85°C –1500 1500
–40°C to +125°C –15000 15000
ID(OFF) Drain off leakage current(1) VDD = 39.6V, VSS = –39.6V
Switch state is off
VS = +25V / –25V
VD = –25V / +25V		 25°C 30 150 pA
–40°C to +50°C –350 110 350
–40°C to +85°C –1500 1500
–40°C to +125°C –15000 15000
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 39.6V, VSS = –39.6V
Switch state is on
VS = VD = ±25V		 25°C 45 150 pA
–40°C to +50°C –350 350
–40°C to +85°C –1000 1000
–40°C to +125°C –7500 7500
ΔIS(ON)
ΔID(ON)		 Leakage current mismatch between channels(2) VDD = 39.6V, VSS = –39.6V
Switch state is on
VS = VD = ±25V		 25°C 25 pA
50°C 30
85°C 40
125°C 70
(1) When VS is positive,VD is negative. And when VS is negative, VD is positive.
(2) When VS is at a voltage potential, VD is floating. And when VD is at a voltage potential, VS is floating.