SCES295AB June   2000  – October 2025 SN74LVC1G06

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics: –40°C to +85°C
    7. 5.7 Switching Characteristics: –40°C to +125°C
    8. 5.8 Operating Characteristics
    9. 5.9 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 CMOS Open-Drain Outputs
      2. 6.3.2 Standard CMOS Inputs
      3. 6.3.3 Negative Clamping Diodes
      4. 6.3.4 Partial Power Down (Ioff)
      5. 6.3.5 Over-voltage Tolerant Inputs
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information

1 Features

  • ESD protection exceeds JESD 22
    • 2000V human body model (A114-A)
    • 200V machine model (A115-A)
    • 1000V charged-device model (C101)
  • Available in the Texas Instruments NanoFree™ package
  • Supports 5V VCC operation
  • Input and open-drain output accept voltages up to 5.5V
  • Maximum tpd of 4.5ns at 3.3V at 125°C
  • Low power consumption, 10µA maximum ICC
  • ±24mA output drive at 3.3V for open-drain devices
  • Ioff supports partial-power-down mode and back-drive protection
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • Can be used for up or down translation
  • Schmitt trigger action on all ports