SCES640L January   2007  – January 2026 TXS0102

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics, VCCA = 1.8 ± 0.15V
    7. 5.7  Switching Characteristics, VCCA = 2.5 ± 0.2V
    8. 5.8  Switching Characteristics, VCCA = 3.3 ± 0.3V
    9. 5.9  Switching Characteristics: Tsk, TMAX
    10. 5.10 Operating Characteristics: VCCA = 1.5V to 3.3V, VCCB = 1.5V to 3.3V
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Architecture
      2. 7.3.2 Input Driver Requirements
      3. 7.3.3 Output Load Considerations
      4. 7.3.4 Enable and Disable
      5. 7.3.5 Pullup or Pulldown Resistors on I/O Lines
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.1 Overview

The TXS0102 device is a directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.65V to 3.6V, while the B port can accept I/O voltages from 2.3V to 5.5V. The device is a pass-gate architecture with edge-rate accelerators (one-shots) to improve the overall data rate. 10kΩ pullup resistors, commonly used in open-drain applications, have been conveniently integrated so that an external resistor is not needed. While this device is designed for open-drain applications, the device can also translate push-pull CMOS logic outputs.