SLIS005C April   1993  – March 2025 TPIC6A595

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Dissipation Rating Table
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics
    6. 5.6 Thermal Resistance
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature description
      1. 7.3.1 Serial-In Interface
      2. 7.3.2 Clear Register
      3. 7.3.3 Output Control
      4. 7.3.4 Cascaded Application
      5. 7.3.5 Current Limit Function
  9. 8 Device Functional Modes
    1. 8.1 Operating with Vcc < 4.5V
    2. 8.2 Operating with 5.5V < Vcc ≤ 7V
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.1 Absolute Maximum Ratings

over recommended operating case temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Logic supply voltage(2) 7 V
VI Logic input voltage range -0.3 7 V
VDS Power DMOS drain-to-source voltage(3) 50 V
Continuous source-drain diode anode current 1 A
Pulsed source-drain diode anode current(4) 2 A
IDN Pulsed drain current, each output, all outputs on(4) TA = 25°C 1.1 A
IDN Continuous drain current, each output, all outputs on TA = 25°C 350 A
Peak drain current, single output(4) TA = 25°C 1.1 A
EAS Single-pulse avalanche energy (see Figure 6-6) 75 mJ
IAS Avalanche current(5) 600 mA
Continuous total dissipation See Section 5.2
TC Operating case temperature range -40 125 ℃
TJ Operating virtual junction temperature range -40 150 ℃
Tstg Storage temperature range -65 150 ℃
Lead temperature 1,6mm (1/16 inch) from case for 10 seconds 260 ℃
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to LGND and PGND.
(3) Each power DMOS source is internally connected to PGND.
(4) Pulse duration ≤ 100µs and duty cycle ≤ 2%.
(5) DRAIN supply voltage = 15V, starting junction temperature (TJS) = 25°C, L = 210mH, IAS = 600mA (see Figure 6-6).