SLIS032D July   1995  – April 2025 TPIC6B595

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Serial-In Interface
      2. 7.3.2 Clear Register
      3. 7.3.3 Output Control
      4. 7.3.4 Cascaded Application
      5. 7.3.5 Current Limit Function
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With V(VCC) < 4.5 (Minimum V(VCC))
      2. 7.4.2 Operating With 5.5 V < V(VCC) < 6 V
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Support Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MINMAXUNIT
VCCLogic supply voltage(2)–0.37V
VILogic input voltage–0.37V
VDSPower DMOS drain-to-source voltage(3)–0.350V
Continuous source-to-drain diode anode current0500mA
Pulsed source-to-drain diode anode current(4)01A
IDPulsed drain current, each output, all outputs ON, TC = 25°C(4)0500mA
IDContinuous drain current, each output, all outputs ON, TC = 25°C(4)0150mA
IDMPeak drain current single output, TC = 25°C(4)0500mA
EASSingle-pulse avalanche energy (See Typical Characteristics below)030mJ
IASAvalanche current(5)0500mA
Continuous total dissipationSee Thermal Information
TJOperating virtual junction temperature–40150°C
TCOperating case temperature–40125°C
TstgStorage temperature–65150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to GND.
(3) Each power DMOS source is internally connected to GND.
(4) Pulse duration ≤ 100μs and duty cycle ≤ 2%.
(5) DRAIN supply voltage = 15V, starting junction temperature (TJS) = 25°C, L = 1.5H, IAS = 200mA (See Typical Characteristics below).