SLLSFQ8C December   2024  – September 2025 THVD9491-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  ESD Ratings [IEC]
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Information
    6. 5.6  Power Dissipation
    7. 5.7  Electrical Characteristics
    8. 5.8  Switching Characteristics: 20Mbps
    9. 5.9  Switching Characteristics: 50Mbps
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 ±40-V Fault Protection
      2. 7.3.2 Integrated IEC ESD and EFT Protection
      3. 7.3.3 Driver Overvoltage and Overcurrent Protection
      4. 7.3.4 Enhanced Receiver Noise Immunity
      5. 7.3.5 Receiver Fail-Safe Operation
      6. 7.3.6 Low-Power Shutdown Mode
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Data Rate and Bus Length
        2. 8.2.1.2 Stub Length
        3. 8.2.1.3 Bus Loading
        4. 8.2.1.4 Transient Protection
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Thermal Information

THERMAL METRIC(1) THVD9491-SEP UNIT
D (SOIC)
14-PINS
RθJA Junction-to-ambient thermal resistance 87.5 °C/W
RθJB Junction-to-board thermal resistance 43.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 41.8 °C/W
ΨJT Junction-to-top characterization parameter 8.1 °C/W
ΨJB Junction-to-board characterization parameter 43.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.