SLLSG34 March   2025 THVD8000T

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Power Dissipation Characteristics
    8. 5.8 Switching Characteristics
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 OOK Modulation with F_SET pin
      2. 7.3.2 OOK Demodulation
      3. 7.3.3 Transmitter Timeout
      4. 7.3.4 Polarity Free Operation
      5. 7.3.5 Glitch Free Mode Change
      6. 7.3.6 Integrated IEC ESD and EFT Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 OOK Mode
      2. 7.4.2 Thermal shutdown (TSD)
  9. 8 Application Information Disclaimer
    1. 8.1 Application information
    2. 8.2 Typical application (OOK mode)
      1. 8.2.1 Design requirements
        1. 8.2.1.1 Carrier frequency
      2. 8.2.2 Detailed design procedure
        1. 8.2.2.1 Inductor value selection
        2. 8.2.2.2 Capacitor value selection
      3. 8.2.3 Application Curves
    3. 8.3 Power supply recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Thermal Information

THERMAL METRIC(1) THVD8000T UNIT
DDF (SOT-23)
8 PINS
RθJA Junction-to-ambient thermal resistance 106.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 38.4 °C/W
RθJB Junction-to-board thermal resistance 29.9 °C/W
ψJT Junction-to-top characterization parameter 29.5 °C/W
ψJB Junction-to-top characterization parameter 29.5 °C/W
(1) For more information about traditional and new thermalmetrics, see the Semiconductor and ICPackage Thermal Metrics application report.