SLOS158E June   1996  – July 2025 TLV2231

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Available Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Dissipation Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics: VDD = 3V
    5. 6.5 Operating Characteristics, VDD = 3V
    6. 6.6 Electrical Characteristics, VDD = 5V
    7. 6.7 Operating Characteristics, VDD = 5V
    8. 6.8 Typical Characteristics
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving Large Capacitive Loads
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.4 Electrostatic Discharge Caution

TLV2231 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.