SLPS764B September   2024  – December 2025 RES60A-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Absolute and Ratiometric Tolerances
      2. 6.3.2 Ultra-Low Noise
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Battery Stack Measurement
      2. 7.1.2 Gain Scaling the RES60A-Q1 With the RES11A-Q1
      3. 7.1.3 HIPOT and OVST
        1. 7.1.3.1 Mechanisms of HIPOT
        2. 7.1.3.2 Extended Validation of HIPOT
      4. 7.1.4 Hot Swap Response
      5. 7.1.5 High-frequency Response
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ Simulation Software (Free Download)
        3. 8.1.1.3 TI Reference Designs
        4. 8.1.1.4 Analog Filter Designer
        5. 8.1.1.5 RES60A-Q1 Ratio and Voltage Error Calculator
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

HIPOT and OVST

HIPOT, or high potential testing, is commonly used to screen out early failing devices to be used in high-voltage applications. This testing is intended to identify any devices on the left side of the so-called “bathtub curve” of reliability. For detailed discussion of the bathtub curve model, refer to TI Reliability Terminology.

RES60A-Q1 Bathtub curve of
                    reliability Figure 7-6 Bathtub curve of reliability

The production test program of the RES60A-Q1 includes an over-voltage stress test, or OVST, that is performed on every unit. This OVST is similar to HIPOT in many respects, but has a shorter test duration. Stresses of +2700Vdc and –2700Vdc are applied to the device for 100ms each. A full suite of parametric tests are performed both before and after the OVST, and the results compared to identify any devices with unacceptable parametric shifts due to the OVST. This OVST reduces the risk of early-fail units, without accelerating device aging or damaging good units.