SLPS764B September   2024  – December 2025 RES60A-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Absolute and Ratiometric Tolerances
      2. 6.3.2 Ultra-Low Noise
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Battery Stack Measurement
      2. 7.1.2 Gain Scaling the RES60A-Q1 With the RES11A-Q1
      3. 7.1.3 HIPOT and OVST
        1. 7.1.3.1 Mechanisms of HIPOT
        2. 7.1.3.2 Extended Validation of HIPOT
      4. 7.1.4 Hot Swap Response
      5. 7.1.5 High-frequency Response
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ Simulation Software (Free Download)
        3. 8.1.1.3 TI Reference Designs
        4. 8.1.1.4 Analog Filter Designer
        5. 8.1.1.5 RES60A-Q1 Ratio and Voltage Error Calculator
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Detailed Design Procedure

This design attenuates the high common-mode voltage of the bus to a level that falls within the linear input range of the AMC1311B-Q1. Some key possible circuit error sources can be considered as follows:

  • The AMC1311B-Q1 has a typical input bias current of 3.5nA. With RLV = 25kΩ, this input bias current manifests appears as an 88µV offset error at MID. When this offset is calculated in a root-sum-of-squares with the 400µV typical input offset voltage of the AMC1311B-Q1, a 410µV offset results. This offset represents 0.0205% of the 2V full-scale range, and is typically not the dominating error factor.
  • The gain error and integrated nonlinearity error of the AMC1311B-Q1 can be approximated using the Isolated Amplifier Voltage Sensing Excel Calculator. For this example, the typical FSR error is calculated as 0.06%.
  • The typical initial ratiometric gain tolerance of the RES60A500-Q1 is 0.017%, which sums with the previously mentioned errors of the AMC1311B-Q1 in a root-sum-of-squares manner to give a total typical FSR error of 0.066%.
  • The level-shifting circuit introduces additional errors, and applies a gain factor to the previously discussed errors. However, due to the low offset of the OPA388-Q1 and high precision of the RES11A-Q1, these errors (0.012% FSR) are low enough to not significantly impact the final typical error.

The final calculated result of 0.067% typical FSR error represents a 1σ value, so a ±6σ estimate gives ±0.4% FSR error. The results suggest the circuit meets the ±0.5% FSR application requirement, with margin.