For the high-side protection solution, taking BQ76952 as an example, G-pole discharges to ground when DFET is off. The voltage V_G is clamped around -0.3V by the built-in diode, but S-pole voltage V_S is pulled down to -V_L1 because of the magnitude of the parasitic inductance. Thus, even if G-pole has already discharged to -0.3V relative to ground, GS voltage V_GS is still equal to V_L1-0.3V as long as the following conditions are met:

DFET cannot be fully turned off.

GS voltage cannot discharge the junction capacitance via DSG pin, but must instead discharge through the resistors connected in parallel across two terminals of GS in DFET. This resistor primarily serves to prevent electrostatic accumulation at GS terminals and avoid unintended turn-on. Consequently, the resistor is typically selected to be relatively large, as a smaller GS resistor would increase DC load on BQ76952 charge pump. BQ76952 is not recommended for significant DC load. Therefore, GS resistor is typically of the megohm order, such as 10 MΩ value selected in both Reference 3 and Reference 4. Consequently, the charge and discharge currents of the junction capacitance are in the uA range, resulting in a very slow shutdown time. This generates substantial thermal losses during the shutdown process, leading to overtemperature and damage of DFET.