SLUAB39 January   2026 BQ76905 , BQ76907 , BQ769142 , BQ76920 , BQ76930 , BQ76940 , BQ76942 , BQ76952 , BQ76972

 

  1.   1
  2.   Abstract
  3. 1Introduction to the low-side/high-side protection solutions
  4. 2Short-circuit protection results in overvoltage damage to DFET
    1. 2.1 Low-side protection solution
    2. 2.2 High-side protection solution
    3. 2.3 Summary
  5. 3Short-circuit protection results in overtemperature damage to DFET
    1. 3.1 Low-side protection solution
    2. 3.2 High-side protection solution
    3. 3.3 Summary
  6. 4Conclusion
  7. 5References

3.3 Summary

In summary, compared to the low-side protection solution, the high-side protection solution is not clamped because S-pole of DFET is tied to P+. This causes DFET to turn off slowly when short-circuit protection is pulled down to a negative voltage by the induced voltage of the parasitic inductance at the load side, which makes it more susceptible to overtemperature damage.