SLUSEW1C January   2024  – June 2026 TPS4810-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 7.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Undervoltage Protection (UVLO)
      5. 7.3.5 Reverse Polarity Protection
      6. 7.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 7.3.7 TPS48100-Q1 as a Simple Gate Driver
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selection of Current Sense Resistor, RSNS
        2. 8.2.2.2 Programming the Short-Circuit Protection Threshold – RISCP Selection
        3. 8.2.2.3 Programming the Short-Circuit Protection Delay – CTMR Selection
        4. 8.2.2.4 Selection of MOSFETs, Q1 and Q2
        5. 8.2.2.5 Selection of Bootstrap Capacitor, CBST
        6. 8.2.2.6 Setting the Undervoltage Lockout
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

10 Revision History

Changes from Revision B (March 2026) to Revision C (June 2026)

  • Deleted table note regarding high junction temperature operating lifetimeGo
  • Deleted table note regarding high junction temperature operating lifetimeGo

Changes from Revision A (December 2024) to Revision B (March 2026)

  • Changed MIN from 1.85V to 1.84V and MAX from 3.3V to 3.31VGo
  • Changed MAX from 45μA to 49μAGo
  • Changed TYP from 0.86μA to 1μA and MAX from 3.3μA to 4.6μAGo
  • Changed MAX from 37μA to 46μAGo
  • Changed MIN from 1.176V to 1.168V and MAX from 1.287V to 1.3VGo
  • Changed MIN from 1.09V to 1.083V and MAX from 1.184V to 1.19VGo
  • Changed MAX from 1V to 1.03VGo
  • Changed MIN from 0.3V to 0.292Go
  • Changed MAX from 476nA to 626nAGo
  • Changed MAX from 2V to 2.03VGo
  • Changed MIN from 0.8V to 0.77VGo
  • Changed MAX from 700nA to 910nAGo
  • Changed MAX from 466μA to 510μAGo
  • Changed MIN from 8.1V to 8V and MAX from 9.9V to 9.93VGo
  • Changed MIN from 7.31V to 7.28V and MAX from 8.9V to 8.93VGo
  • Changed MIN from 9.3V to 9V and MAX from 11.4V to 11.43VGo
  • Changed MIN from 9.1V to 9V and MAX from 11.6V to 11.63VGo
  • Changed MAX from 1μA to 1.4μAGo
  • Changed MIN from 5.5V to 5.47V and MAX from 8.3V to 8.33VGo
  • Changed TYP from 1.69A to 1.62AGo
  • Changed TYP from 1.69A to 1.62AGo
  • Changed MIN from 8.4μA to 8.34μA and MAX from 12.33μA to 13.6μAGo
  • Changed MIN from 60mV to 58.8mV and MAX from 90.5mV to 91.8mVGo
  • Changed MIN from 32mV to 31.6mV and MAX from 48.9mV to 49.5mVGo
  • Changed MIN from 15mV to 14.8mV and MAX from 25mV to 25.3mVGo
  • Changed MIN from 283mV to 279mV and MAX from 316mV to 319mVGo
  • Changed MIN from 68.7mV to 67mV and MAX from 82.5mV to 83mVGo
  • Changed MIN from 34.5mV to 33mV and MAX from 46.5mV to 47mVGo
  • Changed MAX from 104μA to 114μAGo
  • Changed MAX from 3.8μA to 4.8μAGo
  • Changed MAX from 3.4μA to 4.3μAGo
  • Changed MIN from 0.93V to 0.924V and MAX from 1.2V to 1.21VGo
  • Changed MIN from 0.15V to 0.148VGo
  • Changed MIN from 53Ω to 52Ω and MAX from 107Ω to 110ΩGo
  • Changed MAX from 410nA to 530nAGo
  • Changed MAX from 2V to 2.02VGo
  • Changed MIN from 0.8V to 0.787VGo
  • Changed MAX from 206nA to 240nAGo
  • Changed MAX from 2V to 2.06VGo
  • Changed MIN from 0.8V to 0.786VGo
  • Changed MAX from 1.53μs to 1.62μsGo
  • Changed MAX from 6.7μs to 7.2μsGo
  • Changed MAX from 0.85μs to 0.91μsGo
  • Changed MAX from 6.79μs to 7.3μsGo
  • Changed MAX from 6μs to 6.5μsGo
  • Changed MAX from 6μs to 6.5μsGo
  • Changed MAX from 4μs to 4.3μsGo
  • Changed MAX from 10μs to 10.7μsGo