SLUSFL6C November 2024 – June 2025 TPSM82866C
PRODMIX
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ_VIN | Quiescent current into VIN pin | EN = High, no load, device not switching | 4 | 10 | µA | |
| IQ_VOS | Quiescent current into VOS pin | EN = High, no load, device not switching, VVOS = 1.8V | 18 | µA | ||
| ISD | Shutdown current(1) | EN = Low, TJ = –40℃ to 85℃ |
0.24 | 1 | µA | |
| VUVLO | Undervoltage lockout threshold | VIN rising | 2.2 | 2.3 | 2.4 | V |
| VIN falling | 2.1 | 2.2 | 2.3 | V | ||
| TJW | Thermal warning threshold | TJ rising | 130 | °C | ||
| Thermal warning hysteresis | TJ falling | 20 | °C | |||
| TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
| Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
| LOGIC INTERFACE | ||||||
| VIH | High-level input threshold voltage at EN, SCL, SDA and VSET/VID | 0.84 | V | |||
| VIL | Low-level input threshold voltage at EN, SCL, SDA and VSET/VID | 0.4 | V | |||
| ISCL,LKG | Input leakage current into SCL pin | 0.01 | 0.8 | µA | ||
| ISDA,LKG | Input leakage current into SDA pin | 0.01 | 0.1 | µA | ||
| IEN,LKG | Input leakage current into EN pin | 0.01 | 0.1 | µA | ||
| CSCL | Parasitic capacitance at SCL | 1 | pF | |||
| CSDA | Parasitic capacitance at SDA | 2.4 | pF | |||
| START-UP, POWER GOOD | ||||||
| tDelay | Enable delay time | Time from EN high to device starts switching with a 249kΩ resistor connected between VSET/VID and GND | 420 | 650 | 1100 | µs |
| VPG(low) | Power-good lower threshold | VOUT referenced to VOUT(nominal) | 85 | 91 | 96 | % |
| VPG(high) | Power-good upper threshold | VOUT referenced to VOUT(nominal) | 103 | 111 | 120 | % |
| VPG,OH | High-level output voltage | Vin | V | |||
| tPG,DLY | Power-good delay | Rising and falling edges | 34 | µs | ||
| OUTPUT | ||||||
| VOUT | Output voltage accuracy | FPWM, no Load, TJ = 0℃ to 85℃ | –1 | 1 | % | |
| FPWM, no Load | –2 | 2 | % | |||
| IVOS,LKG | Input leakage current into VOS pin | EN = Low, Output discharge disabled, VVOS = 1.8V | 0.2 | 2.5 | µA | |
| RDIS | Output discharge resistor at VOS pin | 3.5 | Ω | |||
| Load regulation | VOUT = 0.9V, FPWM | 0.04 | %/A | |||
| POWER SWITCH | ||||||
| RDP | Dropout resistance |
100% mode. VIN = 3.3V, TJ = 25°C | 26 | mΩ | ||
| ILIM | High-side FET forward current limit | TPSM82864xx | 5 | 5.5 | 6 | A |
| TPSM82866xx | 7 | 7.9 | 9 | A | ||
| Low-side FET forward current limit | TPSM82864xx | 4.5 | A | |||
| TPSM82866xx | 6.5 | A | ||||
| Low-side FET negative current limit | –3 | A | ||||
| fSW | PWM switching frequency | IOUT = 1A, VOUT = 0.9V | 2.4 | MHz | ||